Title (en)

SEMICONDUCTOR-ON-INSULATOR SUBSTRATE COMPRISING A BURIED DIAMOND-LIKE CARBON LAYER AND METHOD FOR MAKING SAME

Title (de)

HALBLEITER-AUF-ISOLATOR-SUBSTRAT MIT EINER VERGRABENEN DIAMANTARTIGEN KOHLENSTOFFSCHICHT UND HERSTELLUNGSVERFAHREN DAFÜR

Title (fr)

SUBSTRAT DE TYPE SEMI-CONDUCTEUR SUR ISOLANT COMPORTANT UNE COUCHE ENTERREE EN CARBONE DIAMANT ET PROCEDE DE REALISATION D'UN TEL SUBSTRAT

Publication

EP 1735828 A1 20061227 (FR)

Application

EP 05744615 A 20050325

Priority

• FR 2005000719 W 20050325
• FR 0403071 A 20040325

Abstract (en)

[origin: WO2005093823A1] The invention concerns a substrate comprising successively a base (1), a diamond-like carbon layer (3), a dielectric layer (4) and a semiconductor material layer (5) designed to constitute microelectronic components. A nucleating layer (2) is preferably arranged between the base (1) and the diamond-like carbon layer (3). The dielectric material (4) is selected such that the upper level (Edi) of the valence band of the dielectric material (4) is lower than the upper level (Ecd) of the valence band of the diamond-like carbon (3). The semiconductor material (5) is selected so that the upper level (Esc) of the valence band of the semiconductor material (5) is higher than the upper level (Ecd) of the valence band of the diamond-like carbon (3). The substrate can be made by successive depositions or by assembling first and second stacks.

IPC 8 full level

H01L 21/762 (2006.01)

CPC (source: EP US)

H01L 21/76251 (2013.01 - EP US); H01L 21/76254 (2013.01 - EP US)

Citation (search report)

See references of WO 2005093823A1

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU MC NL PL PT RO SE SI SK TR

DOCDB simple family (publication)

FR 2868204 A1 20050930; FR 2868204 B1 20060616; EP 1735828 A1 20061227; US 2007215941 A1 20070920; WO 2005093823 A1 20051006

DOCDB simple family (application)

FR 0403071 A 20040325; EP 05744615 A 20050325; FR 2005000719 W 20050325; US 59422205 A 20050325