EP 1735839 A2 20061227 - FIELD-EFFECT DEVICE HAVING A METAL-INSULATOR-SEMICONDUCTOR HIGH-VOLTAGE STRUCTURE AND METHOD OF MAKING THE SAME
Title (en)
FIELD-EFFECT DEVICE HAVING A METAL-INSULATOR-SEMICONDUCTOR HIGH-VOLTAGE STRUCTURE AND METHOD OF MAKING THE SAME
Title (de)
FELDEFFEKTBAUELEMENT MIT METALL-ISOLATOR-HALBLEITER-HOCHSPANNUNGS-STRUKTUR UND HERSTELLUNGSVERFAHREN DAFÜR
Title (fr)
STRUCTURE DE DISPOSITIF HAUTE TENSION MOS A MOTIF ELEMENTAIRE EFFILE
Publication
Application
Priority
- IB 2005050887 W 20050311
- US 55331004 P 20040315
Abstract (en)
[origin: WO2005091371A2] A field effect electronic device (e.g., an FET) includes a field plate disposed over a dielectric layer, which is disposed over a semiconductor layer, wherein a drift region of the device is in the semiconductor layer. A doping level varies substantially non-linearly across the drift region, and the device exhibits a substantially constant reduced surface electric field. A method of fabricating a field effect device includes providing a non-linear non-uniform doping density in a drift region of a semiconductor layer of the device wherein both the semiconductor layer and the dielectric layer have non-constant thickness.
IPC 8 full level
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/36 (2006.01); H01L 29/40 (2006.01); H01L 29/41 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/786 (2006.01); H01L 29/08 (2006.01)
CPC (source: EP US)
H01L 29/407 (2013.01 - EP); H01L 29/42384 (2013.01 - EP); H01L 29/7802 (2013.01 - EP US); H01L 29/7824 (2013.01 - EP); H01L 29/78624 (2013.01 - EP); H01L 29/78696 (2013.01 - EP); H01L 29/0657 (2013.01 - EP); H01L 29/0847 (2013.01 - EP); H01L 29/42368 (2013.01 - EP); H01L 29/51 (2013.01 - EP)
Citation (search report)
See references of WO 2005091371A2
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2005091371 A2 20050929; WO 2005091371 A3 20060330; CN 100576564 C 20091230; CN 1930690 A 20070314; EP 1735839 A2 20061227; JP 2007529892 A 20071025
DOCDB simple family (application)
IB 2005050887 W 20050311; CN 200580008214 A 20050311; EP 05709000 A 20050311; JP 2007503478 A 20050311