EP 1741144 A1 20070110 - METHOD FOR PRODUCTION OF A RADIATION-EMITTING SEMI-CONDUCTOR CHIP
Title (en)
METHOD FOR PRODUCTION OF A RADIATION-EMITTING SEMI-CONDUCTOR CHIP
Title (de)
VERFAHREN ZUM HERSTELLEN EINES STRAHLUNGSEMITTIERENDEN HALBLEITERCHIPS
Title (fr)
PROCEDE DE PRODUCTION D'UNE PUCE A SEMI-CONDUCTEUR EMETTANT DES RAYONNEMENTS
Publication
Application
Priority
DE 2004000892 W 20040429
Abstract (en)
[origin: WO2005106972A1] The invention concerns a method for microstructuring a radiation-emitting surface of a series of semiconductor layers for an thin-film light-emitting diode chip, comprising the following steps: (a) performing an epitaxial growth of the series of semiconductor layers on a substrate; (b) forming or applying a reflecting layer (7) on the series of semiconductor layers, which reflects at least part of the radiation produced during the operation in the series of semiconductor layers and which is directed towards the reflecting layer, in the series of semiconductor layers; (c) separating the series of semiconductor layers from the substrate, using a lifting process, a separation zone being disintegrated at least partly in the series of semiconductor layers, such that there remains at the separation surface of the series of semiconductor layers, from which the substrate is separated, anisotropic residues (20) of a component of the separation zone; and (d) etching the separation surface of the series of semiconductor layers, provided with the residues, said anisotropic residues serving at least temporarily as etching mask.
IPC 8 full level
H01L 33/02 (2010.01); H01L 33/22 (2010.01); H01L 33/00 (2010.01); H01L 33/10 (2010.01); H01L 33/20 (2010.01)
CPC (source: EP KR US)
H01L 33/0093 (2020.05 - EP US); H01L 33/12 (2013.01 - KR); H01L 33/22 (2013.01 - EP KR US)
Citation (examination)
FUJII T ET AL: "Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 84, no. 6, 9 February 2004 (2004-02-09), pages 855 - 857, XP012062026, ISSN: 0003-6951, DOI: 10.1063/1.1645992
Designated contracting state (EPC)
DE
DOCDB simple family (publication)
WO 2005106972 A1 20051110; CN 100423300 C 20081001; CN 1943044 A 20070404; DE 112004002809 A5 20070524; DE 112004002809 B4 20231102; DE 112004002809 B9 20240201; EP 1741144 A1 20070110; JP 2007535152 A 20071129; JP 4653804 B2 20110316; KR 101248195 B1 20130327; KR 101361630 B1 20140211; KR 20070026546 A 20070308; KR 20120105059 A 20120924; US 2008093611 A1 20080424; US 2011140141 A1 20110616; US 7897423 B2 20110301; US 8273593 B2 20120925
DOCDB simple family (application)
DE 2004000892 W 20040429; CN 200480042884 A 20040429; DE 112004002809 T 20040429; EP 04730193 A 20040429; JP 2007509862 A 20040429; KR 20067025113 A 20040429; KR 20127022761 A 20040429; US 201113027810 A 20110215; US 57919407 A 20070618