Global Patent Index - EP 1743048 A2

EP 1743048 A2 20070117 - VACUUM DEPOSITION METHOD

Title (en)

VACUUM DEPOSITION METHOD

Title (de)

VAKUUMABSCHEIDUNGSVERFAHREN

Title (fr)

PROCEDE DE DEPOT SOUS VIDE

Publication

EP 1743048 A2 20070117 (FR)

Application

EP 05746900 A 20050415

Priority

  • FR 2005050250 W 20050415
  • FR 0404204 A 20040421

Abstract (en)

[origin: WO2005106070A2] The invention relates to a method for the vacuum deposition of at least one thin layer on a portion of the surface of a substrate. The inventive method is characterised in that it comprises the following steps consisting in: selecting at least one sputtering species which is chemically inactive or active in relation to a material to be sputtered; using at least one linear ion source, which is positioned inside an industrial-size installation, in order to generate a collimated ion beam which mainly comprises the sputtering species; directing the beam towards at least one target based on the material to be sputtered; and positioning at least one portion of the surface of the substrate opposite the target, such that the material sputtered by the ionic bombardment of the target or a material resulting from the reaction of the sputtered material with at least one of the sputtering species is deposited on said portion of surface.

IPC 8 full level

C23C 14/46 (2006.01); C03C 17/00 (2006.01); C03C 17/34 (2006.01); C03C 17/36 (2006.01); C23C 14/00 (2006.01); C23C 14/02 (2006.01); C23C 14/08 (2006.01); C23C 14/18 (2006.01)

CPC (source: EP KR US)

C03C 17/002 (2013.01 - EP US); C03C 17/3411 (2013.01 - EP US); C03C 17/36 (2013.01 - EP US); C03C 17/3618 (2013.01 - EP US); C03C 17/3626 (2013.01 - EP US); C03C 17/3644 (2013.01 - EP US); C03C 17/3652 (2013.01 - EP US); C23C 14/0052 (2013.01 - EP US); C23C 14/46 (2013.01 - EP KR US); C03C 2217/734 (2013.01 - EP US)

Citation (search report)

See references of WO 2005106070A2

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU MC NL PL PT RO SE SI SK TR

DOCDB simple family (publication)

WO 2005106070 A2 20051110; WO 2005106070 A3 20051229; AR 049884 A1 20060913; CN 1950540 A 20070418; EP 1743048 A2 20070117; FR 2869324 A1 20051028; FR 2869324 B1 20070810; JP 2007533856 A 20071122; KR 20070004042 A 20070105; RU 2006141003 A 20080527; US 2009226735 A1 20090910

DOCDB simple family (application)

FR 2005050250 W 20050415; AR P050101584 A 20050421; CN 200580012525 A 20050415; EP 05746900 A 20050415; FR 0404204 A 20040421; JP 2007508949 A 20050415; KR 20067021550 A 20061017; RU 2006141003 A 20050415; US 57893805 A 20050415