EP 1754263 B1 20190116 - WIDE BANDGAP FIELD EFFECT TRANSISTORS WITH SOURCE CONNECTED FIELD PLATES
Title (en)
WIDE BANDGAP FIELD EFFECT TRANSISTORS WITH SOURCE CONNECTED FIELD PLATES
Title (de)
FELDEFFEKTTRANSISTOREN MIT GROSSEM BANDABSTAND MIT SOURCE-VERBUNDENEN FELDPLATTEN
Title (fr)
TRANSISTORS A EFFET DE CHAMP A LARGE BANDE INTERDITE POURVUS DE PLAQUES DE CHAMP CONNECTEES A LA SOURCE
Publication
Application
Priority
- US 2005013725 W 20050421
- US 57134204 P 20040513
- US 95894504 A 20041004
Abstract (en)
[origin: WO2005114747A2] A field effect transistor comprising a buffer and channel layer formed successively on a substrate. A source electrode, drain electrode, and gate are all formed in electrical contact with the channel layer, with the gate between the source and drain electrodes. A spacer layer is formed on at least a portion of a surface of the channel layer between the gate and drain electrode and a field plate is formed on the spacer layer isolated from the gate and channel layer. The spacer layer is electrically connected by at least one conductive path to the source electrode, wherein the field plate reduces the peak operating electric field in the MESFET.
IPC 8 full level
H01L 29/812 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/41 (2006.01); H01L 29/417 (2006.01); H01L 31/0328 (2006.01); H01L 29/20 (2006.01)
CPC (source: EP KR US)
H01L 21/18 (2013.01 - KR); H01L 29/402 (2013.01 - EP US); H01L 29/41725 (2013.01 - EP US); H01L 29/42316 (2013.01 - EP US); H01L 29/812 (2013.01 - EP KR US); H01L 29/1608 (2013.01 - EP); H01L 29/2003 (2013.01 - EP US)
Citation (examination)
- SAITO W ET AL: "DESIGN AND DEMONSTRATION OF HIGH BREAKDOWN VOLTAGE GAN HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) USING FIELD PLATE STRUCTURE FOR POWER ELECTRONICS APPLICATIONS", JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOCIETY OF APPLIED PHYSICS, JP, vol. 43, no. 4B, 1 April 2004 (2004-04-01), pages 2239 - 2242, XP001227744, ISSN: 0021-4922, DOI: 10.1143/JJAP.43.2239
- SAITO W ET AL: "Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device", SOLID STATE ELECTRON, ELSEVIER SCIENCE PUBLISHERS, BARKING, GB, vol. 48, no. 9, 1 September 2004 (2004-09-01), pages 1555 - 1562, XP004518805, ISSN: 0038-1101, DOI: 10.1016/J.SSE.2003.10.003
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2005114747 A2 20051201; WO 2005114747 A3 20060601; AU 2005246697 A1 20051201; AU 2005246697 B2 20110428; BR PI0510960 A 20071120; CA 2564955 A1 20051201; CA 2564955 C 20160823; CN 1998089 A 20070711; CN 1998089 B 20100901; EP 1754263 A2 20070221; EP 1754263 B1 20190116; EP 2515338 A2 20121024; EP 2515338 A3 20121212; EP 2515339 A2 20121024; EP 2515339 A3 20121212; EP 2515339 B1 20210310; JP 2007537596 A 20071220; JP 2014209647 A 20141106; JP 5611509 B2 20141022; JP 5982430 B2 20160831; KR 101142555 B1 20120508; KR 20070007967 A 20070116; TW 200620660 A 20060616; TW 201301510 A 20130101; TW 201438227 A 20141001; TW I452695 B 20140911; TW I502738 B 20151001; TW I620320 B 20180401; US 11664429 B2 20230530; US 2005253167 A1 20051117; US 2017365670 A1 20171221; US 9773877 B2 20170926
DOCDB simple family (application)
US 2005013725 W 20050421; AU 2005246697 A 20050421; BR PI0510960 A 20050421; CA 2564955 A 20050421; CN 200580014866 A 20050421; EP 05756258 A 20050421; EP 12171401 A 20050421; EP 12171403 A 20050421; JP 2007513167 A 20050421; JP 2014126655 A 20140619; KR 20067026207 A 20050421; TW 101131917 A 20050509; TW 103120237 A 20050509; TW 94114829 A 20050509; US 201715696050 A 20170905; US 95894504 A 20041004