EP 1761953 A4 20090225 - TRENCH MOSFET WITH RECESSED CLAMPING DIODE
Title (en)
TRENCH MOSFET WITH RECESSED CLAMPING DIODE
Title (de)
GRABEN-MOSFET MIT AUSGESPARTER KLEMMDIODE
Title (fr)
TRANSISTOR MOS A TRANCHES COMPRENANT UNE DIODE DE BLOCAGE
Publication
Application
Priority
US 2004021211 W 20040630
Abstract (en)
[origin: WO2006011882A1] In a trench-gated MOSFET (840) including an epitaxial layer (842) over a substrate (841) of like conductivity and trenches containing thick bottom oxide (846), sidewall gate oxide (850), and conductive gates (844), body regions (843) of the complementary conductivity are shallower than the gates (844), and clamp regions (853) are deeper and more heavily doped than the body regions but shallower than the trenches. Zener junctions clamp a drain-source voltage lower than the FPI breakdown of body junctions near the trenches, but the zener junctions, being shallower than the trenches, avoid undue degradation of the maximum drain-source voltage. The epitaxial layer (842) may have a dopant concentration that increases step-wise or continuously with depth. Chained implants of the body (843) and clamp regions (853) permit accurate control of dopant concentrations and of junction depth. Alternative fabrication processes permit implantation of the body (843) and clamp regions (853) before gate bus (852) formation or through the gate bus (852) after gate bus formation.
IPC 8 full level
H01L 27/108 (2006.01); H01L 29/06 (2006.01); H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/119 (2006.01)
CPC (source: EP US)
H01L 29/0878 (2013.01 - EP US); H01L 29/66734 (2013.01 - EP); H01L 29/7808 (2013.01 - EP); H01L 29/7813 (2013.01 - EP US); H01L 29/0696 (2013.01 - EP); H01L 29/42368 (2013.01 - EP)
Citation (search report)
- [DX] US 6291298 B1 20010918 - WILLIAMS RICHARD K [US], et al
- [A] US 6049108 A 20000411 - WILLIAMS RICHARD K [US], et al
- [A] EP 0801426 A2 19971015 - HARRIS CORP [US]
- [DA] US 6413822 B2 20020702 - WILLIAMS RICHARD K [US], et al
- [A] US 5637898 A 19970610 - BALIGA BANTVAL J [US]
- See references of WO 2006011882A1
Citation (examination)
- US 5072266 A 19911210 - BULUCEA CONSTANTIN [US], et al
- WO 0201644 A2 20020103 - SILICON WIRELESS CORP [US], et al
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2006011882 A1 20060202; CN 100517719 C 20090722; CN 101002323 A 20070718; EP 1761953 A1 20070314; EP 1761953 A4 20090225; JP 2008505480 A 20080221
DOCDB simple family (application)
US 2004021211 W 20040630; CN 200480043516 A 20040630; EP 04756535 A 20040630; JP 2007519180 A 20040630