EP 1766670 A4 20110302 - METHOD AND FORMING A SEMICONDUCTOR DEVICE HAVING AIR GAPS AND THE STRUCTURE SO FORMED
Title (en)
METHOD AND FORMING A SEMICONDUCTOR DEVICE HAVING AIR GAPS AND THE STRUCTURE SO FORMED
Title (de)
VERFAHREN ZUR BILDUNG EINES HALBLEITERBAUELEMENTS MIT LUFTSPALT UND SO GEBILDETE STRUKTUR
Title (fr)
PROCEDE PERMETTANT DE FORMER UN DISPOSITIF SEMI-CONDUCTEUR COMPRENANT DES CAVITES VIDES ET STRUCTURE RESULTANTE
Publication
Application
Priority
- US 2005018050 W 20050523
- US 70972204 A 20040525
Abstract (en)
[origin: WO2005117085A2] A method of forming a semiconductor device, and the device so formed. Depositing alternating layers of a first dielectric material (12a-f) and a second dielectric material (14a-f), wherein the first and second dielectric materials are selectively etchable at different rates. Forming a first feature (22, 24) within the alternating layers of dielectric material. Selectively etching the alternating layers of dielectric material to remove at least a portion (26) of the first dielectric material in each layer having the first dielectric material and leaving the second dielectric material as essentially unetched.
IPC 8 full level
H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01)
CPC (source: EP KR US)
H01L 21/28 (2013.01 - KR); H01L 21/311 (2013.01 - KR); H01L 21/31116 (2013.01 - EP US); H01L 21/3205 (2013.01 - KR); H01L 21/76807 (2013.01 - EP US); H01L 21/7682 (2013.01 - EP US); H01L 23/5222 (2013.01 - EP US); H01L 23/53295 (2013.01 - EP US); H01L 28/87 (2013.01 - EP US)
Citation (search report)
- [XI] US 6090698 A 20000718 - LEE TONG-HSIN [TW]
- [A] US 2002055243 A1 20020509 - LEE CHIU-TE [TW]
- See references of WO 2005117085A2
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2005117085 A2 20051208; WO 2005117085 A3 20061012; CN 1954414 A 20070425; EP 1766670 A2 20070328; EP 1766670 A4 20110302; JP 2008502140 A 20080124; JP 5362985 B2 20131211; KR 100956718 B1 20100506; KR 20070021191 A 20070222; TW 200539382 A 20051201; US 2005275104 A1 20051215; US 2006166486 A1 20060727; US 2009008788 A1 20090108; US 7078814 B2 20060718; US 7459389 B2 20081202; US 7674705 B2 20100309
DOCDB simple family (application)
US 2005018050 W 20050523; CN 200580015363 A 20050523; EP 05751777 A 20050523; JP 2007515228 A 20050523; KR 20067022307 A 20050523; TW 94114443 A 20050504; US 20126608 A 20080829; US 39105006 A 20060328; US 70972204 A 20040525