EP 1766673 A1 20070328 - METHODS OF FORMING LEAD FREE SOLDER BUMPS AND RELATED STRUCTURES
Title (en)
METHODS OF FORMING LEAD FREE SOLDER BUMPS AND RELATED STRUCTURES
Title (de)
HERSTELLUNGSVERFAHREN FÜR BLEIFREIE LÖTHÖCKER UND VERWANDTE STRUKTUREN
Title (fr)
PROCEDES DE FORMATION DE BOSSAGES DE SOUDURE SANS PLOMB ET STRUCTURES ASSOCIEES
Publication
Application
Priority
- US 2005023041 W 20050629
- US 58401604 P 20040630
Abstract (en)
[origin: WO2006004809A1] Methods of forming an electronic device may include forming an under bump seed metallurgy layer on an electronic substrate. A nickel layer may be formed on the under bump seed metallurgy layer so that the under bump seed metallurgy layer is between the nickel layer and the electronic substrate, and portions of the under bump seed metallurgy layer may be free of the nickel layer. In addition, a solder layer may be formed on the nickel layer so that the nickel layer is between the solder layer and the under bump seed metallurgy layer. In addition, a copper layer may be formed on the under bump seed metallurgy layer before forming the nickel layer with portions of the under bump seed metallurgy layer being free of the copper layer. Accordingly, the under bump seed metallurgy layer may be between the copper layer and the electronic substrate, and the copper layer may be between the under bump seed metallurgy layer and the nickel layer. Related structures are also discussed.
IPC 8 full level
H01L 21/60 (2006.01); H01L 21/288 (2006.01)
CPC (source: EP)
H01L 21/2885 (2013.01); H01L 24/11 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 2224/0231 (2013.01); H01L 2224/03912 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05139 (2013.01); H01L 2224/05144 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05171 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/1147 (2013.01); H01L 2224/13099 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01024 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/0103 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01049 (2013.01); H01L 2924/01051 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01076 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/014 (2013.01); H01L 2924/04941 (2013.01); H01L 2924/14 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/19042 (2013.01); H01L 2924/19043 (2013.01)
Citation (search report)
See references of WO 2006004809A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2006004809 A1 20060112; CN 101044609 A 20070926; EP 1766673 A1 20070328; TW 200616126 A 20060516
DOCDB simple family (application)
US 2005023041 W 20050629; CN 200580021881 A 20050629; EP 05766874 A 20050629; TW 94121987 A 20050629