EP 1790010 A2 20070530 - INTEGRATED SEMICONDUCTOR CASCODE CIRCUIT FOR HIGH-FREQUENCY APPLICATIONS
Title (en)
INTEGRATED SEMICONDUCTOR CASCODE CIRCUIT FOR HIGH-FREQUENCY APPLICATIONS
Title (de)
INTEGRIERTE HALBLEITER-KASKODENSCHALTUNG FÜR HOCHFREQUENZANWENDUNGEN
Title (fr)
CIRCUIT A SEMICONDUCTEURS CASCODE INTEGRE DESTINE A DES APPLICATIONS HAUTE FREQUENCE
Publication
Application
Priority
- EP 2005009810 W 20050913
- DE 102004044835 A 20040914
Abstract (en)
[origin: WO2006029802A2] The invention relates to an integrated semiconductor cascode circuit (46) comprising an emitter layer (12), a base area (14), a second base area (16), an intermediate area (18) and a collector area (26), wherein the first base area (14) is arranged between the emitter layer (12) and the intermediate area (18), and the second base area (16) is arranged between the intermediate area (18) and the collector area (26). The semiconductor cascode circuit (46) is characterized in that between a dielectric layer (48) provided with a central opening (50) is arranged between the first base area (14) and the second base area (16). The invention also relates to a method for the production of said semiconductor cascode circuit (46). .
IPC 8 full level
H01L 27/082 (2006.01); H01L 21/8222 (2006.01); H01L 27/06 (2006.01)
CPC (source: EP US)
H01L 21/8222 (2013.01 - EP US); H01L 27/0823 (2013.01 - EP US); H01L 29/0642 (2013.01 - EP US); H01L 29/1004 (2013.01 - EP US); H01L 29/66242 (2013.01 - EP US); H01L 29/7378 (2013.01 - EP US); H01L 29/732 (2013.01 - EP US); H01L 29/7371 (2013.01 - EP US)
Citation (search report)
See references of WO 2006029802A2
Designated contracting state (EPC)
DE FR
DOCDB simple family (publication)
DE 102004044835 A1 20060316; DE 102004044835 B4 20081211; EP 1790010 A2 20070530; US 2007166940 A1 20070719; US 7723198 B2 20100525; WO 2006029802 A2 20060323; WO 2006029802 A3 20060713
DOCDB simple family (application)
DE 102004044835 A 20040914; EP 05784791 A 20050913; EP 2005009810 W 20050913; US 71765907 A 20070314