EP 1794099 A4 20081217 - METHOD OF FORMING AN IN-SITU RECESSED STRUCTURE
Title (en)
METHOD OF FORMING AN IN-SITU RECESSED STRUCTURE
Title (de)
VERFAHREN ZUR BILDUNG EINER IN-SITU VERTIEFTEN STRUKTUR
Title (fr)
PROCEDE DE FORMATION DE STRUCTURE EN RETRAIT IN SITU
Publication
Application
Priority
- US 2005032276 W 20050912
- US 94657704 A 20040921
- US 94657404 A 20040921
- US 94656604 A 20040921
- US 94615904 A 20040921
- US 94656504 A 20040921
Abstract (en)
[origin: WO2006033872A2] The present invention features a method of patterning a substrate that includes forming, on the substrate, a multi-layer film with a surface, an etch rate interface and an etch-differential interface. The etch-differential interface is defined between the etch rate interface and the surface. A recorded pattern is transferred onto the substrate defined, in part, by the etch-differential interface. The recorded pattern has etched pattern characteristics (EPC) that define the shape of the pattern formed for a given etch process or set of etch processes. The etch-differential interface modifies the EPC. By establishing a suitable etch-differential interface, one may obtain a recorded pattern that differs substantially in shape compared with the shape of the patterned layer or the same pattern may be obtained.
IPC 8 full level
H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01)
CPC (source: EP KR)
G03F 7/0002 (2013.01 - EP KR); H01L 21/02118 (2013.01 - EP KR); H01L 21/02126 (2013.01 - EP KR); H01L 21/022 (2013.01 - EP KR); H01L 21/02216 (2013.01 - EP KR); H01L 21/02282 (2013.01 - EP KR); H01L 21/0274 (2013.01 - KR); H01L 21/302 (2013.01 - KR); H01L 21/3086 (2013.01 - EP KR); H01L 21/31144 (2013.01 - EP KR); H01L 21/76802 (2013.01 - EP); H01L 21/76811 (2013.01 - EP KR); H01L 21/76817 (2013.01 - EP KR); H01L 21/76819 (2013.01 - EP KR); H01L 21/76838 (2013.01 - EP); H01L 21/76885 (2013.01 - EP KR)
Citation (search report)
- [X] US 6375870 B1 20020423 - VISOVSKY NICK J [US], et al
- [X] EP 1403928 A2 20040331 - HEWLETT PACKARD DEVELOPMENT CO [US]
- [X] WO 0207199 A1 20020124 - NANONEX CORP [US], et al
- [AD] JOHNSON S C ET AL: "Advances in step and flash imprint lithography", PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, SPIE, BELLINGHAM, VA; US, vol. 5037, 25 February 2003 (2003-02-25), pages 197 - 202, XP002314656
- [A] WATANABE H ET AL: "SUBMICRON FEATURE PATTERING USING SPIN-ON-GLASS IMAGE REVERSAL (SOGIR)", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, ELECTROCHEMICAL SOCIETY. MANCHESTER, NEW HAMPSHIRE, US, vol. 135, no. 11, 1 November 1988 (1988-11-01), pages 2863 - 2866, XP000126521, ISSN: 0013-4651
- See references of WO 2006033872A2
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2006033872 A2 20060330; WO 2006033872 A3 20070222; EP 1794099 A2 20070613; EP 1794099 A4 20081217; EP 2146369 A2 20100120; EP 2146369 A3 20100331; EP 2146370 A2 20100120; EP 2146370 A3 20100331; JP 2008513229 A 20080501; JP 2014150263 A 20140821; JP 5848386 B2 20160127; KR 101243646 B1 20130325; KR 101262730 B1 20130509; KR 20070065334 A 20070622; KR 20120013447 A 20120214; SG 147417 A1 20081128; SG 147418 A1 20081128; SG 147419 A1 20081128; SG 147420 A1 20081128
DOCDB simple family (application)
US 2005032276 W 20050912; EP 05796480 A 20050912; EP 09173395 A 20050912; EP 09173416 A 20050912; JP 2007532387 A 20050912; JP 2014042722 A 20140305; KR 20077006500 A 20050912; KR 20117030614 A 20050912; SG 2008075152 A 20050912; SG 2008075160 A 20050912; SG 2008075178 A 20050912; SG 2008075186 A 20050912