EP 1799879 A1 20070627 - PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION APPARATUS AND METHOD
Title (en)
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION APPARATUS AND METHOD
Title (de)
-VORRICHTUNG UND VERFAHREN ZUR PLASMAUNTERSTÜTZTEN CVD
Title (fr)
APPAREIL ET PROCEDE DE DEPOT DE VAPEUR CHIMIQUE AMELIORE AU PLASMA
Publication
Application
Priority
US 2004030275 W 20040914
Abstract (en)
[origin: WO2006031234A1] A substrate processing system includes a deposition chamber (102) and a plurality of tubular electrodes (126) positioned within the deposition chamber (102) defining plasma regions (128) therebetween.
IPC 8 full level
C23C 16/54 (2006.01)
CPC (source: EP)
C23C 16/24 (2013.01); C23C 16/45578 (2013.01); C23C 16/509 (2013.01); C23C 16/54 (2013.01); H01J 37/32009 (2013.01); H01J 37/32541 (2013.01)
Citation (search report)
See references of WO 2006031234A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2006031234 A1 20060323; AU 2004323359 A1 20060323; CA 2553122 A1 20060323; CN 101018887 A 20070815; EP 1799879 A1 20070627; JP 2008513978 A 20080501
DOCDB simple family (application)
US 2004030275 W 20040914; AU 2004323359 A 20040914; CA 2553122 A 20040914; CN 200480043215 A 20040914; EP 04784214 A 20040914; JP 2007531149 A 20040914