EP 1800352 A1 20070627 - (EN) METHOD FOR THE CONTACT SEPARATION OF ELECTRICALLY-CONDUCTING LAYERS ON THE BACK CONTACTS OF SOLAR CELLS AND CORRESPONDING SOLAR CELL
Title (en)
(EN) METHOD FOR THE CONTACT SEPARATION OF ELECTRICALLY-CONDUCTING LAYERS ON THE BACK CONTACTS OF SOLAR CELLS AND CORRESPONDING SOLAR CELL
Title (de)
VERFAHREN ZUR KONTAKTTRENNUNG ELEKTRISCH LEITFÄHIGER SCHICHTEN AUF RÜCKKONTAKTIERTEN SOLARZELLEN UND ENTSPRECHENDE SOLARZELLE
Title (fr)
PROCÉDÉ D'ISOLATION DE CONTACTS DE COUCHES ÉLECTROCONDUCTRICES SUR DES CELLULES SOLAIRES À CONTACT ÉTABLI SUR LA FACE ARRIÈRE ET CELLULE SOLAIRE CORRESPONDANTE
Publication
Application
Priority
- EP 2005011046 W 20051013
- DE 102004050269 A 20041014
Abstract (en)
[origin: WO2006042698A1] A method for production of a solar cell (1), comprising a semiconductor substrate (2), is disclosed, the electrical contact of which is achieved on the back face of the semiconductor substrate. The back face of the semiconductor substrate comprises locally doped regions (3). The adjacent regions (4) have a different doping from said region (3). According to the invention, short-circuiting of the conducting material (5) of the solar cell may be avoided, whereby both regions (3,4), at least at the boundaries (6) thereof, are coated with a thin electrically-insulating layer (7). Both regions (3,4) are then coated over the whole surface thereof with an electrically-conducting material (5). The separation of the electrically-conducting layers (5) is achieved by application of an etching barrier layer (8) to the whole surface, which is then selectively removed without a mask, for example by laser ablation, locally above the insulating layer (7). By the subsequent attack of an etching solution the etching barrier layer (8) is locally removed from the conducting layer (5) in the region of the openings (9).
IPC 8 full level
H01L 31/0224 (2006.01); H01L 31/04 (2014.01); H01L 31/068 (2012.01); H01L 31/18 (2006.01)
CPC (source: EP KR US)
H01L 31/0224 (2013.01 - KR); H01L 31/022433 (2013.01 - EP US); H01L 31/022441 (2013.01 - EP US); H01L 31/022458 (2013.01 - US); H01L 31/04 (2013.01 - KR); H01L 31/0682 (2013.01 - EP US); H01L 31/18 (2013.01 - US); Y02E 10/547 (2013.01 - EP US)
Citation (search report)
See references of WO 2006042698A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
DE 102004050269 A1 20060420; AU 2005296716 A1 20060427; AU 2005296716 B2 20120202; CA 2583760 A1 20060427; CA 2583760 C 20130806; CN 100524832 C 20090805; CN 101048875 A 20071003; EP 1800352 A1 20070627; JP 2008517451 A 20080522; JP 5459957 B2 20140402; KR 101192548 B1 20121017; KR 20070092953 A 20070914; MX 2007004533 A 20080114; US 2008035198 A1 20080214; US 2011053312 A1 20110303; US 2014087515 A1 20140327; WO 2006042698 A1 20060427
DOCDB simple family (application)
DE 102004050269 A 20041014; AU 2005296716 A 20051013; CA 2583760 A 20051013; CN 200580035004 A 20051013; EP 05799115 A 20051013; EP 2005011046 W 20051013; JP 2007536099 A 20051013; KR 20077010796 A 20051013; MX 2007004533 A 20051013; US 201314090739 A 20131126; US 66531805 A 20051013; US 88171410 A 20100914