EP 1803153 A1 20070704 - SEMICONDUCTOR DEVICE HAVING A FRONTSIDE CONTACT AND VERTICAL TRENCH ISOLATION AND METHOD OF FABRICATING SAME
Title (en)
SEMICONDUCTOR DEVICE HAVING A FRONTSIDE CONTACT AND VERTICAL TRENCH ISOLATION AND METHOD OF FABRICATING SAME
Title (de)
HALBLEITERVORRICHTUNG MIT EINEM VORDERSEITENKONTAKT UND VERTIKALER GRABENISOLATION UND HERSTELLUNGSVERFAHREN DAFÜR
Title (fr)
DISPOSITIF SEMI-CONDUCTEUR PRESENTANT UN CONTACT FRONTAL ET UNE ISOLATION DE TRANCHE VERTICALE ET PROCEDE DE FABRICATION CORRESPONDANT
Publication
Application
Priority
- IB 2005053369 W 20051013
- EP 04105047 A 20041014
- EP 05790176 A 20051013
Abstract (en)
[origin: WO2006040738A1] A method of forming a contact post (36) and surrounding isolation trench (28) in a semiconductor-on-insulator (SOI) substrate (20). The method comprises etching a contact hole (26) and surrounding isolation trench (28) from an active layer (6) of the substrate (20) to the insulating layer (4), masking the trench (28) and further etching the contact hole (26) to the base substrate layer (2), filling the trench (28) and contact hole (26) with undoped intrinsic polysilicon (34) and then performing a doping process in respect of the polysilicon material filling the contact hole (26) so as to form in situ a highly doped contact post (36), while the material filling the isolation trench (28) remains non-conductive. The method enables the isolation trench and contact post to be formed substantially simultaneously so as to avoid undue interference with the device fabrication process.
IPC 8 full level
H01L 21/74 (2006.01); H01L 27/12 (2006.01)
CPC (source: EP KR US)
H01L 21/20 (2013.01 - KR); H01L 21/74 (2013.01 - KR); H01L 21/743 (2013.01 - EP US); H01L 21/76283 (2013.01 - EP US); H01L 21/84 (2013.01 - EP US); H01L 27/12 (2013.01 - KR); H01L 27/1203 (2013.01 - EP US)
Citation (search report)
See references of WO 2006040738A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2006040738 A1 20060420; CN 100524688 C 20090805; CN 101040374 A 20070919; EP 1803153 A1 20070704; JP 2008517457 A 20080522; KR 20070063585 A 20070619; TW 200629466 A 20060816; US 2007262411 A1 20071115; US 7651921 B2 20100126
DOCDB simple family (application)
IB 2005053369 W 20051013; CN 200580035334 A 20051013; EP 05790176 A 20051013; JP 2007536335 A 20051013; KR 20077010571 A 20070510; TW 94135411 A 20051011; US 57731305 A 20051013