EP 1803156 A1 20070704 - INTEGRATED CIRCUIT USED IN SMART POWER TECHNOLOGY
Title (en)
INTEGRATED CIRCUIT USED IN SMART POWER TECHNOLOGY
Title (de)
INTEGRIERTE SCHALTUNG IN SMART-POWER-TECHNOLOGIE
Title (fr)
CIRCUIT INTEGRE RELEVANT DE LA TECHNOLOGIE DITE "SMART POWER"
Publication
Application
Priority
- EP 2005054023 W 20050816
- DE 102004050767 A 20041016
Abstract (en)
[origin: WO2006040211A1] The invention relates to an integrated circuit used in smart power technology, particularly for use in the automobile domain, which has at least the following: high-voltage connections (a1, a2) for connecting to a high-voltage (U<SUB>H</SUB>); a smart circuit device (3) with low-voltage components, and; an ESD protective circuit (4), which is connected between the high-voltage connections (a1, a2) and which has a MOSFET (T1) connected via its source (S) and its drain (D) to the high-voltage connections (a1, a2). The gate (G) of the MOSFET is connected via a resistor (Rg) to the source (S) of the MOSFET. The gate resistor (Rg) is made of polycrystalline silicon. According to the invention, a high ESD strength with a relatively low surface use i.e. low costs can be achieved by using the poly-resistor as a gate resistor (Rg). A protective diode (D1, D2) can be advantageously connected between the source (S) and gate (G) and between the gate (G) and drain (D) of the MOSFET (T1) each time in a blocking direction, this protective diode blocking above the supply voltage (U<SUB>H</SUB>).
IPC 8 full level
H01L 27/02 (2006.01)
CPC (source: EP US)
H01L 27/0266 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US)
C-Set (source: EP US)
Citation (search report)
See references of WO 2006040211A1
Designated contracting state (EPC)
DE FR IT NL
DOCDB simple family (publication)
DE 102004050767 A1 20060420; CN 101040380 A 20070919; EP 1803156 A1 20070704; JP 2008517452 A 20080522; US 2008116519 A1 20080522; WO 2006040211 A1 20060420
DOCDB simple family (application)
DE 102004050767 A 20041016; CN 200580035404 A 20050816; EP 05779140 A 20050816; EP 2005054023 W 20050816; JP 2007536132 A 20050816; US 66557005 A 20050816