Global Patent Index - EP 1806440 A3

EP 1806440 A3 20090513 - Manufacturing method of aluminum nitride single crystal and aluminum nitride single crystal

Title (en)

Manufacturing method of aluminum nitride single crystal and aluminum nitride single crystal

Title (de)

Verfahren zur Herstellung eines Aluminiumnitrideinkristalls und Aluminiumnitrideinkristall

Title (fr)

Procédé de fabrication d'un monocristal de nitrure d'alumine

Publication

EP 1806440 A3 20090513 (EN)

Application

EP 07250032 A 20070104

Priority

  • JP 2006002744 A 20060110
  • JP 2006072933 A 20060316
  • JP 2006220981 A 20060814

Abstract (en)

[origin: EP1806440A2] A seed crystal is formed of a rod-like aluminum nitride single crystal whose length direction is oriented to the c-axis direction. Exposed surface on the side portion thereof on which an aluminum nitride material is grown into a crystal has an inclination of 90° relative to a {0001} surface. With this configuration, an aluminum nitride single crystal with excellent crystallinity can be manufactured.

IPC 8 full level

C30B 29/40 (2006.01); C30B 23/00 (2006.01)

CPC (source: EP US)

C30B 23/00 (2013.01 - EP US); C30B 29/40 (2013.01 - EP US)

Citation (search report)

  • [X] EP 1514958 A1 20050316 - AMMONO SP ZOO [PL], et al
  • [Y] WO 2005121415 A1 20051222 - AMMONO SP ZOO [PL], et al
  • [A] EP 1405936 A1 20040407 - AMMONO SP ZOO [PL], et al
  • [A] WO 2004053210 A1 20040624 - AMMONO SP ZOO [PL], et al
  • [X] STRASSBURG MARTIN ET AL: "The growth and optical properties of large, high-quality AlN single crystals", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 96, no. 10, 1 January 2004 (2004-01-01), pages 5870 - 5876, XP012068947, ISSN: 0021-8979
  • [X] ZHUANG D ET AL: "Defect-selective etching of bulk AlN single crystals in molten KOH/NaOH eutectic alloy", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 262, no. 1-4, 15 February 2004 (2004-02-15), pages 89 - 94, XP004489381, ISSN: 0022-0248
  • [Y] B RAGHOTHAMACHAR, M DUDLEY, J C ROJO, K MORGAN, L J SCHOWALTER, JOURNAL OF CRYSTAL GROWTH, vol. 250, 1 March 2003 (2003-03-01), pages 244 - 250, XP002521281
  • [A] D ZHUANG, J H EDGAR, LIANGHONG LIU, B LIU,L WALKER: "wet chemical etching of AlN single crystals", MRS INTERNET JOURNAL NITRIDE SEMICONDUCTOR RESEARCH, vol. 7, no. 7, 1 January 2002 (2002-01-01), pages 1 - 6, XP002521280
  • [A] YOKOKAWA H ET AL: "X-ray powder diffraction data for two hexagonal aluminum monoxycarbide phases", JOURNAL OF THE AMERICAN CERAMIC SOCIETY, BLACKWELL PUBLISHING, MALDEN, MA, US, vol. 65, 1 March 1982 (1982-03-01), pages C - 40, XP008099454, ISSN: 0002-7820

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

Designated extension state (EPC)

AL BA HR MK RS

DOCDB simple family (publication)

EP 1806440 A2 20070711; EP 1806440 A3 20090513; JP 2007277074 A 20071025; US 2007169689 A1 20070726

DOCDB simple family (application)

EP 07250032 A 20070104; JP 2006220981 A 20060814; US 64913707 A 20070103