EP 1807556 A2 20070718 - METHOD FOR GROWING Si-Ge SEMICONDUCTOR MATERIALS AND DEVICES ON SUBSTRATES
Title (en)
METHOD FOR GROWING Si-Ge SEMICONDUCTOR MATERIALS AND DEVICES ON SUBSTRATES
Title (de)
VERFAHREN ZUM ZIEHEN VON SI-GE-HALBLEITERMATERIALIEN UND BAUELEMENTEN AUF SUBSTRATEN
Title (fr)
METHODE DE CROISSANCE PAR EPITAXIE DE MATERIAUX ET DE DISPOSITIFS A SEMI-CONDUCTEURS SI-GE SUR DES SUBSTRATS
Publication
Application
Priority
- US 2005012157 W 20050408
- US 61012004 P 20040914
- US 2004043854 W 20041231
- US 66077905 P 20050311
Abstract (en)
[origin: WO2006031257A2] A method is provided for growing Si-Ge materials on Si(100) with Ge-rich contents (Ge>50 at.%) and precise stoichiometries SiGe, SiGe<sub
IPC 8 full level
H01L 21/20 (2006.01); H01L 29/161 (2006.01); H01L 29/20 (2006.01); H01L 29/22 (2006.01)
CPC (source: EP KR)
B82Y 10/00 (2013.01 - EP); B82Y 30/00 (2013.01 - EP); C30B 25/00 (2013.01 - KR); C30B 25/02 (2013.01 - EP); C30B 29/52 (2013.01 - EP); H01L 21/02381 (2013.01 - EP); H01L 21/02422 (2013.01 - EP); H01L 21/02532 (2013.01 - EP); H01L 21/02587 (2013.01 - EP); H01L 21/0262 (2013.01 - EP); H01L 21/02636 (2013.01 - EP); H01L 21/20 (2013.01 - KR)
Designated contracting state (EPC)
DE FR
DOCDB simple family (publication)
WO 2006031257 A2 20060323; WO 2006031257 A3 20060908; EP 1807556 A2 20070718; EP 1807556 A4 20110302; KR 101060372 B1 20110829; KR 20070083681 A 20070824
DOCDB simple family (application)
US 2005012157 W 20050408; EP 05746524 A 20050408; KR 20077008535 A 20050408