Global Patent Index - EP 1807556 A4

EP 1807556 A4 20110302 - METHOD FOR GROWING Si-Ge SEMICONDUCTOR MATERIALS AND DEVICES ON SUBSTRATES

Title (en)

METHOD FOR GROWING Si-Ge SEMICONDUCTOR MATERIALS AND DEVICES ON SUBSTRATES

Title (de)

VERFAHREN ZUM ZIEHEN VON SI-GE-HALBLEITERMATERIALIEN UND BAUELEMENTEN AUF SUBSTRATEN

Title (fr)

METHODE DE CROISSANCE PAR EPITAXIE DE MATERIAUX ET DE DISPOSITIFS A SEMI-CONDUCTEURS SI-GE SUR DES SUBSTRATS

Publication

EP 1807556 A4 20110302 (EN)

Application

EP 05746524 A 20050408

Priority

  • US 2005012157 W 20050408
  • US 61012004 P 20040914
  • US 2004043854 W 20041231
  • US 66077905 P 20050311

Abstract (en)

[origin: WO2006031257A2] A method is provided for growing Si-Ge materials on Si(100) with Ge-rich contents (Ge>50 at.%) and precise stoichiometries SiGe, SiGe<sub

IPC 8 full level

H01L 21/20 (2006.01); H01L 29/161 (2006.01); H01L 29/20 (2006.01); H01L 29/22 (2006.01)

CPC (source: EP KR)

B82Y 10/00 (2013.01 - EP); B82Y 30/00 (2013.01 - EP); C30B 25/00 (2013.01 - KR); C30B 25/02 (2013.01 - EP); C30B 29/52 (2013.01 - EP); H01L 21/02381 (2013.01 - EP); H01L 21/02422 (2013.01 - EP); H01L 21/02532 (2013.01 - EP); H01L 21/02587 (2013.01 - EP); H01L 21/0262 (2013.01 - EP); H01L 21/02636 (2013.01 - EP); H01L 21/20 (2013.01 - KR)

Citation (search report)

  • [XAI] US 4910153 A 19900320 - DICKSON CHARLES R [US]
  • [XAI] US 4777023 A 19881011 - FIESELMANN BENJAMIN F [US]
  • [XAI] CHANGWU HU ET AL: "Synthesis of highly coherent SiGe and Si4Ge nanostructures by molecular beam epitaxy of h3SiGeH3 and Ge(SiH3)4", CHEMISTRY OF MATERIALS, AMERICAN CHEMICAL SOCIETY, WASHINGTON, US, vol. 15, no. 19, 23 September 2003 (2003-09-23), pages 3569 - 3572, XP001521469, ISSN: 0897-4756, DOI: 10.1021/CM034477W
  • [XAI] BAUER MATTHEW ET AL: "Synthesis of ternary SiGeSn semiconductors on Si(100) via SnxGe1-x buffer layers", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 83, no. 11, 15 September 2003 (2003-09-15), pages 2163 - 2165, XP012035089, ISSN: 0003-6951
  • [A] WOLF S ED - WOLF S ET AL: "CHAPTER 6: Chemical Vapor Deposition of Amorphous and Polycrystalline thin Films", 1 January 1986, SILICON PROCESSING FOR THE VLSI ERA. VOLUME 1: PROCESS TECHNOLOGY, LATTICE PRESS, SUNSET BEACH, CALIFORNIA, USA, PAGE(S) 161 - 197, ISBN: 978-0-9616721-3-3, XP009134833
  • [A] GAIDUK P I ET AL: "Strain-relaxed SiGe/Si heteroepitaxial structures of low threading-dislocation density", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 367, no. 1-2, 1 May 2000 (2000-05-01), pages 120 - 125, XP004203895, ISSN: 0040-6090, DOI: 10.1016/S0040-6090(00)00660-X
  • See references of WO 2006031257A2

Citation (examination)

HAYNES T E ET AL: "Composition dependence of solid-phase epitaxy in silicon-germanium alloys: experiment and theory", PHYSICAL REVIEW, B. CONDENSED MATTER, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 51, no. 12, 15 March 1995 (1995-03-15), pages 7762 - 7771, XP009129828, ISSN: 0163-1829

Designated contracting state (EPC)

DE FR

DOCDB simple family (publication)

WO 2006031257 A2 20060323; WO 2006031257 A3 20060908; EP 1807556 A2 20070718; EP 1807556 A4 20110302; KR 101060372 B1 20110829; KR 20070083681 A 20070824

DOCDB simple family (application)

US 2005012157 W 20050408; EP 05746524 A 20050408; KR 20077008535 A 20050408