EP 1815505 A2 20070808 - TENSILE AND COMPRESSIVE STRESSED MATERIALS FOR SEMICONDUCTORS
Title (en)
TENSILE AND COMPRESSIVE STRESSED MATERIALS FOR SEMICONDUCTORS
Title (de)
ZUG- UND DRUCKGESPANNTE MATERIALIEN FÜR HALBLEITER
Title (fr)
MATERIAUX CONTRAINTS EN TENSION ET EN COMPRESSION POUR SEMI-CONDUCTEURS
Publication
Application
Priority
- US 2005041079 W 20051110
- US 62860004 P 20041116
- US 5593605 A 20050211
Abstract (en)
[origin: US2006105106A1] A stressed film is formed on a substrate. The substrate is placed in a process zone and a plasma is formed of a process gas provided in the process zone, the process gas having silicon-containing gas and nitrogen-containing gas. A diluent gas such as nitrogen can also be added. The as-deposited stressed material can be exposed to ultraviolet radiation or electron beams to increase the stress value of the deposited material. In addition or in the alternative, a nitrogen plasma treatment can be used to increase the stress value of the material during deposition. Pulsed plasma methods to deposit stressed materials are also described.
IPC 8 full level
H01L 21/318 (2006.01); C23C 16/34 (2006.01); C23C 16/56 (2006.01); H01L 21/3105 (2006.01)
CPC (source: EP KR US)
C23C 16/345 (2013.01 - EP KR US); C23C 16/5096 (2013.01 - EP KR US); C23C 16/56 (2013.01 - EP KR US); H01J 37/32082 (2013.01 - EP KR US); H01L 21/0217 (2013.01 - EP KR US); H01L 21/02274 (2013.01 - EP KR US); H01L 21/3105 (2013.01 - EP KR US); H01L 21/3185 (2013.01 - US); H01L 2924/0002 (2013.01 - EP KR US)
C-Set (source: EP US)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR
Designated extension state (EPC)
AL BA HR MK YU
DOCDB simple family (publication)
US 2006105106 A1 20060518; CN 101088150 A 20071212; CN 101088150 B 20130213; EP 1815505 A2 20070808; JP 2008522405 A 20080626; JP 4903154 B2 20120328; KR 100954254 B1 20100423; KR 101244832 B1 20130322; KR 101244839 B1 20130320; KR 101244850 B1 20130319; KR 101244859 B1 20130319; KR 101244863 B1 20130319; KR 20070088711 A 20070829; KR 20090052399 A 20090525; KR 20090122993 A 20091201; KR 20110138294 A 20111226; KR 20110138295 A 20111226; KR 20110138296 A 20111226; TW 200625447 A 20060716; TW I360180 B 20120311; WO 2006055459 A2 20060526; WO 2006055459 A3 20070712
DOCDB simple family (application)
US 5593605 A 20050211; CN 200580038908 A 20051110; EP 05848796 A 20051110; JP 2007543146 A 20051110; KR 20077013773 A 20051110; KR 20097007962 A 20051110; KR 20097021518 A 20051110; KR 20117028553 A 20051110; KR 20117028554 A 20051110; KR 20117028555 A 20051110; TW 94139185 A 20051108; US 2005041079 W 20051110