EP 1820222 A1 20070822 - SILICON-BASED LIGHT EMITTING DIODE
Title (en)
SILICON-BASED LIGHT EMITTING DIODE
Title (de)
SILIZIUMBASIERTE LICHTEMITTIERENDE DIODE
Title (fr)
DIODE ELECTROLUMINESCENTE A BASE DE SILICIUM
Publication
Application
Priority
- KR 2005003847 W 20051114
- KR 20040102956 A 20041208
- KR 20050037623 A 20050504
Abstract (en)
[origin: WO2006062300A1] Provided is a highly efficient silicon-based light emitting diode (LED) including a Distributed Bragg Reflector (DBR), an n-type doping layer, and a p-type substrate structure. The silicon-based LED includes: a substrate having a p-type mesa substrate structure; an active layer that is formed on the substrate and has a first surface and a second surface opposite the first surface; a first reflective layer facing the first surface of the active layer; a second reflective layer that is located on either side of the p-type substrate structure and faces the second surface of the active layer; an n-type doping layer sandwiched between the active layer and the first reflective layer; a first electrode electrically connected to the n-type doping layer; and a second electrode electrically connected to the p-type substrate structure.
IPC 8 full level
H01L 33/34 (2010.01); H01L 33/38 (2010.01); H01L 33/46 (2010.01)
CPC (source: EP)
H01L 33/34 (2013.01); H01L 33/38 (2013.01); H01L 33/46 (2013.01)
Citation (search report)
See references of WO 2006062300A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
DOCDB simple family (application)
KR 2005003847 W 20051114; EP 05820850 A 20051114