EP 1825506 A1 20070829 - METHOD FOR PRODUCING DEEP TRENCH STRUCTURES
Title (en)
METHOD FOR PRODUCING DEEP TRENCH STRUCTURES
Title (de)
VERFAHREN ZUR HERSTELLUNG VON DEEP-TRENCH-STRUKTUREN
Title (fr)
PROCEDE DE PRODUCTION DE STRUCTURES A TRANCHEE PROFONDE
Publication
Application
Priority
- EP 2005013359 W 20051213
- DE 102004060821 A 20041217
Abstract (en)
[origin: WO2006066755A1] The invention relates to a method for producing deep trench structures in an STI structure of a semiconductor body, comprising the following steps: introducing STI recesses into the semiconductor body and filling them with a first filling material; subjecting a first surface of a semiconductor structure to a CMP process, thereby leveling the filling material applied and producing the STI structure; structuring the leveled STI structure so produced; etching at least one deep trench in the area of the STI structure using the structured, leveled STI structure as the hard mask, thereby producing the deep trench structures.
IPC 8 full level
H01L 21/762 (2006.01)
CPC (source: EP US)
H01L 21/76224 (2013.01 - EP US)
Citation (search report)
See references of WO 2006066755A1
Designated contracting state (EPC)
DE FR
DOCDB simple family (publication)
DE 102004060821 A1 20060629; DE 102004060821 B4 20110428; EP 1825506 A1 20070829; US 2007264792 A1 20071115; US 7851326 B2 20101214; WO 2006066755 A1 20060629
DOCDB simple family (application)
DE 102004060821 A 20041217; EP 05819407 A 20051213; EP 2005013359 W 20051213; US 81238607 A 20070618