EP 1830417 A2 20070905 - Semiconductor device and its manufacturing method
Title (en)
Semiconductor device and its manufacturing method
Title (de)
Halbleitervorrichtung und Herstellungsverfahren dafür
Title (fr)
Dispositif semi-conducteur et son procédé de fabrication
Publication
Application
Priority
- JP 2006055671 A 20060302
- JP 2006253835 A 20060920
Abstract (en)
A semiconductor device comprises a support member having a pair of first conductive materials and a pair of second conductive materials on an insulating substrate, and a sealing member covering a semiconductor element arranged on the support member, wherein the support member has an insulating portion where the insulating substrate is exposed between the pair of the first conductive materials, and at least one of the pair of the second conductive materials is arranged along the side of the insulating portion, and the sealing member is disposed on a region including at least a part of a region of the first conductive material or the second conductive material.
IPC 8 full level
H01L 33/48 (2010.01); H01L 33/62 (2010.01); H01L 33/58 (2010.01)
CPC (source: EP US)
H01L 33/58 (2013.01 - EP US); H01L 33/62 (2013.01 - EP US); H01L 2224/48465 (2013.01 - EP US); H01L 2224/49107 (2013.01 - EP US); H01L 2224/73265 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR
Designated extension state (EPC)
AL BA HR MK YU
DOCDB simple family (publication)
EP 1830417 A2 20070905; EP 1830417 A3 20101103; EP 1830417 B1 20170705; JP 2007266568 A 20071011; JP 5130680 B2 20130130; US 2007205419 A1 20070906; US 7968980 B2 20110628
DOCDB simple family (application)
EP 07102427 A 20070215; JP 2006253835 A 20060920; US 71238607 A 20070301