Global Patent Index - EP 1831430 A2

EP 1831430 A2 20070912 - AN IN-SITU CHAMBER CLEAN PROCESS TO REMOVE BY-PRODUCT DEPOSITS FROM CHEMICAL VAPOR ETCH CHAMBER

Title (en)

AN IN-SITU CHAMBER CLEAN PROCESS TO REMOVE BY-PRODUCT DEPOSITS FROM CHEMICAL VAPOR ETCH CHAMBER

Title (de)

IN-SITU-KAMMERREINIGUNGSVERFAHREN ZUR ENTFERNUNG VON NEBENPRODUKTABLAGERUNGEN AUS EINER CHEMIKALIENDAMPFÄTZKAMMER

Title (fr)

PROCEDE DE NETTOYAGE IN SITU D'UNE CHAMBRE PERMETTANT D'ELIMINER DES DEPOTS DE SOUS-PRODUIT D'UNE CHAMBRE DE GRAVURE PAR VAPEUR CHIMIQUE

Publication

EP 1831430 A2 20070912 (EN)

Application

EP 05854872 A 20051220

Priority

  • US 2005046226 W 20051220
  • US 63789704 P 20041221
  • US 13720005 A 20050524
  • US 26616705 A 20051103

Abstract (en)

[origin: WO2006069085A2] A method and apparatus for cleaning a processing chamber comprising blocking a flow of cooling fluid to a channel within a support member within a processing chamber, elevating the support member to be within about 0.1 inches of a gas distribution plate, heating the gas distribution plate, and introducing a thermally conductive gas through the gas distribution plate into the processing chamber. In one aspect, the chamber comprises a chamber body and a support assembly at least partially disposed within the chamber body adapted to support a substrate thereon. The chamber further comprises a lid assembly disposed on an upper surface of the chamber body. The lid assembly includes a top plate and a gas delivery assembly which define a plasma cavity therebetween, wherein the gas delivery assembly is adapted to heat the substrate. A remote plasma source having a U-shaped plasma region is connected to the gas delivery assembly.

IPC 8 full level

C23F 1/00 (2006.01); H01L 21/306 (2006.01)

CPC (source: EP KR)

B08B 7/00 (2013.01 - EP); B08B 7/0035 (2013.01 - EP KR); C23C 16/50 (2013.01 - KR); C23C 16/503 (2013.01 - KR); C23C 16/505 (2013.01 - KR); C23C 16/511 (2013.01 - KR); H01J 37/32009 (2013.01 - EP); H01J 37/32357 (2013.01 - EP); H01J 37/3244 (2013.01 - EP KR); H01J 37/32522 (2013.01 - EP KR); H01J 37/32862 (2013.01 - EP); H01L 21/0262 (2013.01 - KR); H01L 21/67207 (2013.01 - KR); H01L 29/665 (2013.01 - EP); H01L 29/6656 (2013.01 - EP); H01L 29/6659 (2013.01 - EP); H01L 29/7833 (2013.01 - EP)

Citation (search report)

See references of WO 2006069085A2

Designated contracting state (EPC)

DE NL

Designated extension state (EPC)

AL BA HR MK YU

DOCDB simple family (publication)

WO 2006069085 A2 20060629; WO 2006069085 A3 20090611; EP 1831430 A2 20070912; KR 20070087196 A 20070827

DOCDB simple family (application)

US 2005046226 W 20051220; EP 05854872 A 20051220; KR 20077016827 A 20070720