EP 1831929 A1 20070912 - GATE STRUCTURE AND METHOD FOR MAKING SAME
Title (en)
GATE STRUCTURE AND METHOD FOR MAKING SAME
Title (de)
GATESTRUKTUR UND HERSTELLUNGSVERFAHREN DAFÜR
Title (fr)
STRUCTURE DE GRILLE ET PROCEDE DE FABRICATION
Publication
Application
Priority
- FR 2005050812 W 20051005
- FR 0452272 A 20041005
Abstract (en)
[origin: WO2006037927A1] The invention concerns a MOS transistor whereof the gate comprises successively an insulating layer (31), a metal silicide layer (50), an encapsulating conductive material layer (53), and a polysilicon layer (55).
IPC 8 full level
H01L 29/49 (2006.01); H01L 21/8238 (2006.01)
CPC (source: EP US)
H01L 21/28026 (2013.01 - EP US); H01L 29/665 (2013.01 - EP US)
Citation (search report)
See references of WO 2006037927A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2006037927 A1 20060413; CN 101061586 A 20071024; EP 1831929 A1 20070912; JP 2008516437 A 20080515; TW 200633216 A 20060916; US 2011095381 A1 20110428
DOCDB simple family (application)
FR 2005050812 W 20051005; CN 200580033871 A 20051005; EP 05810641 A 20051005; JP 2007535216 A 20051005; TW 94134627 A 20051004; US 66485305 A 20051005