EP 1835344 A1 20070919 - SILICON-CONTAINING PHOTOSENSITIVE COMPOSITION, METHOD FOR FORMING THIN FILM PATTERN USING SAME, PROTECTIVE FILM FOR ELECTRONIC DEVICE, GATE INSULATING FILM AND THIN FILM TRANSISTOR
Title (en)
SILICON-CONTAINING PHOTOSENSITIVE COMPOSITION, METHOD FOR FORMING THIN FILM PATTERN USING SAME, PROTECTIVE FILM FOR ELECTRONIC DEVICE, GATE INSULATING FILM AND THIN FILM TRANSISTOR
Title (de)
SILIZIUMHALTIGE LICHTEMPFINDLICHE ZUSAMMENSETZUNG, VERFAHREN ZUR BILDUNG EINER DÜNNFILMSTRUKTUR UNTER DEREN VERWENDUNG, SCHUTZFILM FÜR EINE ELEKTRONISCHE EINRICHTUNG, GATE-ISOLATIONSFILM UND DÜNNFILMTRANSISTOR
Title (fr)
COMPOSITION PHOTOSENSIBLE CONTENANT DU SILICIUM, PROCEDE DE FORMATION DE MOTIF EN FILM MINCE UTILISANT LA COMPOSITION, FILM PROTECTEUR POUR DISPOSITIF ELECTRONIQUE, FILM ISOLANT POUR GRILLE ET FILM MINCE POUR TRANSISTOR
Publication
Application
Priority
- JP 2005024090 W 20051228
- JP 2005000833 A 20050105
- JP 2005200144 A 20050708
- JP 2005227091 A 20050804
Abstract (en)
Disclosed is a photosensitive composition having photosensitivity which is alkaline developable without containing a crosslinking agent. Specifically disclosed is a silicon-containing photosensitive composition characterized by containing a silicon-containing polymer including at least one polymer (A1) represented by the general formula (1) below, wherein at least one of R 11 - R 1n is an H and the rest of them are organic groups, or at least one polymer (A1) and one polymer (A2) represented by the general formula (2) below, and a compound (B) which generates an acid or a base when irradiated with an active ray or radiation ray. (In the formula, at least one of R 11 - R 1n represents an H, and n represents an integer of 1 or more.) (In the formula, R 21 - R 2n represent atoms other than H or functional groups, and n represents an integer of 1 or more.)
IPC 8 full level
G03F 7/075 (2006.01); G02B 5/20 (2006.01); G03F 7/004 (2006.01); G03F 7/038 (2006.01); G11C 11/42 (2006.01); H01L 21/027 (2006.01); H01L 21/336 (2006.01); H01L 29/786 (2006.01)
CPC (source: EP KR US)
G03F 7/0007 (2013.01 - EP KR US); G03F 7/0043 (2013.01 - KR); G03F 7/0045 (2013.01 - EP KR US); G03F 7/0382 (2013.01 - KR); G03F 7/0757 (2013.01 - EP KR US); H01L 21/02126 (2013.01 - EP KR US); H01L 21/02216 (2013.01 - EP KR US); H01L 21/02282 (2013.01 - EP KR US); H01L 21/02348 (2013.01 - EP KR US); H01L 21/3124 (2016.02 - US); H01L 29/4908 (2013.01 - EP KR US); H01L 29/66765 (2013.01 - EP US); G03F 7/0382 (2013.01 - EP US)
Citation (search report)
See references of WO 2006073115A1
Designated contracting state (EPC)
NL
DOCDB simple family (publication)
EP 1835344 A1 20070919; KR 20070094617 A 20070920; TW 200632560 A 20060916; US 2009206328 A1 20090820; WO 2006073115 A1 20060713
DOCDB simple family (application)
EP 05822681 A 20051228; JP 2005024090 W 20051228; KR 20077015311 A 20070704; TW 94147298 A 20051229; US 79462405 A 20051228