EP 1839332 A2 20071003 - FORMATION AND TREATMENT OF A SIGE STRUCTURE
Title (en)
FORMATION AND TREATMENT OF A SIGE STRUCTURE
Title (de)
-
Title (fr)
FORMATION ET TRAITEMENT D'UNE STRUCTURE EN SIGE
Publication
Application
Priority
- EP 2006050261 W 20060117
- FR 0500524 A 20050119
- US 14548205 A 20050602
Abstract (en)
[origin: WO2006077216A2] The invention relates to a method for forming a structure (30) provide with a layer (2) removed from a donor plate (10) comprising, prior to removal, a first Si<SUB>1-x</SUB>Ge<SUB>x </SUB>layer (1) and a second layer (2) placed on the first Si<SUB>1-y</SUB>Ge<SUB>y </SUB>layer (1) (x and y ranges, respectively, from 0 to 1, and x differs from y). The inventive method consists: a) in implanting atomic species in such a way that an embrittlement area (4) under the second (2), b) in gluing the donor plate (10) to a receiving plate (20), c) in heating for detaching the removed layers (1', 2) from the donor plate (10) in the embrittlement area (4), d) in carrying out a rapid thermal annealing (also called RAT) at a temperature equal to or greater than about 1000 °C for a time equal to or less than 5 minutes and e) in selectively etching the remaining part of the first layer (1') in front of the second layer (2).
IPC 8 full level
H01L 21/324 (2006.01); H01L 21/265 (2006.01); H01L 21/762 (2006.01)
CPC (source: EP KR US)
H01L 21/20 (2013.01 - KR); H01L 21/26506 (2013.01 - EP US); H01L 21/76254 (2013.01 - EP)
Citation (search report)
See references of WO 2006077216A2
Citation (examination)
JP 2003168789 A 20030613 - SHINETSU HANDOTAI KK
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2006077216 A2 20060727; WO 2006077216 A3 20070208; EP 1839332 A2 20071003; KR 20070090251 A 20070905
DOCDB simple family (application)
EP 2006050261 W 20060117; EP 06703581 A 20060117; KR 20077016429 A 20070718