Global Patent Index - EP 1841713 A1

EP 1841713 A1 20071010 - METHOD FOR PRODUCTION OF CERAMIC SEMICONDUCTORS MADE FROM METAL OXIDES SUCH AS TIN IN PARTICULAR FOR VARISTORS

Title (en)

METHOD FOR PRODUCTION OF CERAMIC SEMICONDUCTORS MADE FROM METAL OXIDES SUCH AS TIN IN PARTICULAR FOR VARISTORS

Title (de)

VERFAHREN ZUR HERSTELLUNG VON KERAMIKHALBLEITERN AUS METALLOXIDEN WIE ZINN, INSBESONDERE FÜR VARISTOREN

Title (fr)

PROCEDE DE PREPARATION DE CERAMIQUES SEMI-CONDUCTRICES CONSTITUEES D'OXYDES DE METAUX TEL QUE L'ETAIN EN PARTICULIER POUR LES VARISTANCES

Publication

EP 1841713 A1 20071010 (FR)

Application

EP 06709425 A 20060123

Priority

  • FR 2006050040 W 20060123
  • FR 0550204 A 20050124

Abstract (en)

[origin: WO2006077355A1] The invention relates to a method for production of a ceramic semiconductor, preferably made from at least one base metal oxide which is a simple oxide of a single base metal and at least one doping metal oxide, said ceramic having a porosity less than or equal to 5 %, preferably less than or equal to 3 %, more preferably less than or equal to 1 %, in which the following successive steps are carried out: a powder is provided made up of one or more base metal oxides, said oxides being simple oxides of a single base metal, one or more on base metals in a non-oxidised metallic form, one or more oxides of doping metals and optionally one or more doping metals in a non-oxidised metallic form, said powder is moulded and the moulded powder is sintered. Said ceramic semiconductor may be used for the production of non-linear resistances with regard to voltage and particularly of varistors.

IPC 8 full level

C04B 35/457 (2006.01); C01B 13/32 (2006.01); C04B 35/653 (2006.01); C22C 1/10 (2006.01); C22C 29/12 (2006.01); C22F 1/00 (2006.01); H01C 7/108 (2006.01)

CPC (source: EP)

C01B 13/322 (2013.01); C04B 35/457 (2013.01); C04B 35/6265 (2013.01); C04B 35/62665 (2013.01); C04B 35/628 (2013.01); C04B 35/62805 (2013.01); C04B 35/653 (2013.01); H01C 17/06533 (2013.01); C04B 2235/3227 (2013.01); C04B 2235/3241 (2013.01); C04B 2235/3251 (2013.01); C04B 2235/3267 (2013.01); C04B 2235/3275 (2013.01); C04B 2235/3277 (2013.01); C04B 2235/3284 (2013.01); C04B 2235/40 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/5445 (2013.01); C04B 2235/77 (2013.01); C04B 2235/786 (2013.01)

Citation (search report)

See references of WO 2006077355A1

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

DOCDB simple family (publication)

FR 2881135 A1 20060728; FR 2881135 B1 20080118; BR PI0607011 A2 20091201; EP 1841713 A1 20071010; WO 2006077355 A1 20060727

DOCDB simple family (application)

FR 0550204 A 20050124; BR PI0607011 A 20060123; EP 06709425 A 20060123; FR 2006050040 W 20060123