Global Patent Index - EP 1842242 A2

EP 1842242 A2 2007-10-10 - TERAHERTZ RADIATING DEVICE BASED ON SEMICONDUCTOR COUPLED QUANTUM WELLS

Title (en)

TERAHERTZ RADIATING DEVICE BASED ON SEMICONDUCTOR COUPLED QUANTUM WELLS

Title (de)

TERAHERTZ-STRAHLUNGSEINRICHTUNG AUF DER BASIS VON HALBLEITERGEKOPPELTEN QUANTENMULDEN

Title (fr)

DISPOSITIF DE RAYONNEMENT TERAHERTZ BASE SUR DES PUITS QUANTIQUES COUPLES A DES SEMI-CONDUCTEURS

Publication

EP 1842242 A2 (EN)

Application

EP 05703116 A

Priority

IL 2005000073 W

Abstract (en)

[origin: WO2006077566A2] A semiconductor device and method of its fabrication are provided to enable the device operation in a THz spectral range. The device comprises a heterostructure including at least first and second semiconductor layers. The first and second layers are made of materials providing a quantum mechanical coupling between an electron quantum well (EQW) in the first layer and a hole quantum well (HQW) in the second layer, and providing an overlap between the valence band of the material of the second layer and the conduction band of the material of the first layer. A layout of the layers is selected so as to provide a predetermined dispersion of energy subbands in the conduction band of the first layer and the valence band of the second layer. An application of an external bias field across the first and second layers causes THz radiation originating from radiative transitions of non-equilibrium carriers between at least one of the following: neighboring energy subbands of the EQW, neighboring energy subbands of the HQW, and ground energy subbands of the EQW and HQW.

IPC 8 full level (invention and additional information)

H01L 33/06 (2010.01); H01S 5/34 (2006.01)

CPC (invention and additional information)

H01S 1/02 (2013.01); B82Y 20/00 (2013.01); H01L 33/06 (2013.01); H01S 5/34 (2013.01); H01S 5/3419 (2013.01); H01S 5/3422 (2013.01); H01S 2302/02 (2013.01)

Citation (search report)

See references of WO 2006077566A3

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU MC NL PL PT RO SE SI SK TR

EPO simple patent family

WO 2006077566 A2 20060727; WO 2006077566 A3 20060824; EP 1842242 A2 20071010

INPADOC legal status


2015-12-30 [18D] APPLICATION DEEMED TO BE WITHDRAWN

- Effective date: 20150801

2008-12-17 [17Q] FIRST EXAMINATION REPORT

- Effective date: 20081112

2008-04-23 [DAX] REQUEST FOR EXTENSION OF THE EUROPEAN PATENT (TO ANY COUNTRY) (DELETED)

2007-10-10 [17P] REQUEST FOR EXAMINATION FILED

- Effective date: 20070801

2007-10-10 [AK] DESIGNATED CONTRACTING STATES:

- Kind Code of Ref Document: A2

- Designated State(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU MC NL PL PT RO SE SI SK TR