EP 1842242 A2 20071010 - TERAHERTZ RADIATING DEVICE BASED ON SEMICONDUCTOR COUPLED QUANTUM WELLS
Title (en)
TERAHERTZ RADIATING DEVICE BASED ON SEMICONDUCTOR COUPLED QUANTUM WELLS
Title (de)
TERAHERTZ-STRAHLUNGSEINRICHTUNG AUF DER BASIS VON HALBLEITERGEKOPPELTEN QUANTENMULDEN
Title (fr)
DISPOSITIF DE RAYONNEMENT TERAHERTZ BASE SUR DES PUITS QUANTIQUES COUPLES A DES SEMI-CONDUCTEURS
Publication
Application
Priority
IL 2005000073 W 20050120
Abstract (en)
[origin: WO2006077566A2] A semiconductor device and method of its fabrication are provided to enable the device operation in a THz spectral range. The device comprises a heterostructure including at least first and second semiconductor layers. The first and second layers are made of materials providing a quantum mechanical coupling between an electron quantum well (EQW) in the first layer and a hole quantum well (HQW) in the second layer, and providing an overlap between the valence band of the material of the second layer and the conduction band of the material of the first layer. A layout of the layers is selected so as to provide a predetermined dispersion of energy subbands in the conduction band of the first layer and the valence band of the second layer. An application of an external bias field across the first and second layers causes THz radiation originating from radiative transitions of non-equilibrium carriers between at least one of the following: neighboring energy subbands of the EQW, neighboring energy subbands of the HQW, and ground energy subbands of the EQW and HQW.
IPC 8 full level
H01L 33/00 (2006.01); H01L 33/06 (2010.01); H01S 5/34 (2006.01)
CPC (source: EP)
B82Y 20/00 (2013.01); H01L 33/06 (2013.01); H01S 1/02 (2013.01); H01S 5/34 (2013.01); H01S 5/3419 (2013.01); H01S 5/3422 (2013.01); H01S 2302/02 (2013.01)
Citation (search report)
See references of WO 2006077566A2
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2006077566 A2 20060727; WO 2006077566 A3 20060824; EP 1842242 A2 20071010
DOCDB simple family (application)
IL 2005000073 W 20050120; EP 05703116 A 20050120