EP 1850179 A1 20071031 - Semiconductor substrate for improving pattern formation in photolithographic process
Title (en)
Semiconductor substrate for improving pattern formation in photolithographic process
Title (de)
Halbleitersubstrat zur Verbesserung der Strukturbildung im photolithographischen Prozess
Title (fr)
Substrat à semi-conducteur pour améliorer la formation de motifs dans un processus photolithographique
Publication
Application
Priority
- EP 01119037 A 20010807
- JP 2000239705 A 20000808
Abstract (en)
A semiconductor substrate comprises a semiconductor layer comprising a group III nitride as a main component. A scattering portion for scattering an incident beam of light incident on one plane of the semiconductor layer is provided on another plane or inside of the semiconductor layer.
IPC 8 full level
G03F 7/09 (2006.01); H01L 21/027 (2006.01); H01L 33/00 (2006.01); H01L 33/20 (2010.01); H01L 33/22 (2010.01)
CPC (source: EP KR US)
G03F 7/091 (2013.01 - EP US); H01L 21/02389 (2013.01 - EP US); H01L 21/0242 (2013.01 - EP US); H01L 21/0245 (2013.01 - EP US); H01L 21/02458 (2013.01 - EP US); H01L 21/02502 (2013.01 - EP US); H01L 21/0254 (2013.01 - EP US); H01L 21/02639 (2013.01 - EP US); H01L 21/027 (2013.01 - KR); H01L 33/007 (2013.01 - EP US); H01L 33/005 (2013.01 - EP US); H01L 33/20 (2013.01 - EP US); H01L 33/22 (2013.01 - EP US); H01S 5/0207 (2013.01 - EP US); H01S 5/22 (2013.01 - EP US); H01S 5/2219 (2013.01 - EP US); H01S 5/32341 (2013.01 - EP US)
Citation (search report)
- [XA] US 6091085 A 20000718 - LESTER STEVEN D [US]
- [YA] US 5779924 A 19980714 - KRAMES MICHAEL R [US], et al
- [Y] JP H0794784 A 19950407 - MITSUBISHI CABLE IND LTD
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 1180725 A2 20020220; EP 1180725 A3 20060809; EP 1850179 A1 20071031; JP 2011151413 A 20110804; JP 5363526 B2 20131211; KR 100791162 B1 20080102; KR 20020013438 A 20020220; TW 512546 B 20021201; US 2002037599 A1 20020328; US 2003183832 A1 20031002; US 2005167692 A1 20050804; US 2008105950 A1 20080508; US 6562644 B2 20030513; US 6905898 B2 20050614; US 7345311 B2 20080318
DOCDB simple family (application)
EP 01119037 A 20010807; EP 07014324 A 20010807; JP 2011086064 A 20110408; KR 20010047696 A 20010808; TW 90119329 A 20010808; US 41399503 A 20030416; US 92188501 A 20010806; US 9280405 A 20050330; US 97058208 A 20080108