EP 1852923 A3 20080514 - Photosensing transistors
Title (en)
Photosensing transistors
Title (de)
Photosensible Transistoren
Title (fr)
Transistors de détection photoélectrique
Publication
Application
Priority
GB 0608730 A 20060503
Abstract (en)
[origin: EP1852923A2] A thin film transistor (TFT) photosensitive to illumination with light, which may enhance the transistor's characteristics and the controlling parameters of the transistor state. The transistor comprises an insulating substrate (1); a source electrode (2); a drain electrode; a semiconductor layer (4) of a first semiconductor material, which forms a channel of the transistor; a gate electrode (6); and an insulating layer (5) between the gate electrode and the semiconductor layer. A second semiconductor material (3) is disposed between and in electrical connection with the semiconductor layer and at least one of the source electrode and the drain electrode. The second semiconductor material is photoconductive.
IPC 8 full level
H01L 51/44 (2006.01)
CPC (source: EP GB KR US)
B82Y 10/00 (2013.01 - EP US); H01L 31/1136 (2013.01 - GB); H10K 10/471 (2023.02 - KR); H10K 10/486 (2023.02 - KR); H10K 30/65 (2023.02 - EP GB KR US); H10K 30/81 (2023.02 - EP KR US); H10K 85/113 (2023.02 - KR); H10K 85/1135 (2023.02 - KR); H10K 85/115 (2023.02 - KR); H10K 85/151 (2023.02 - KR); H10K 85/215 (2023.02 - KR); B82Y 10/00 (2013.01 - KR); H10K 10/464 (2023.02 - EP US); H10K 10/466 (2023.02 - EP US); H10K 10/471 (2023.02 - EP US); H10K 10/486 (2023.02 - EP US); H10K 10/82 (2023.02 - EP GB KR US); H10K 85/113 (2023.02 - EP US); H10K 85/1135 (2023.02 - EP US); H10K 85/115 (2023.02 - EP US); H10K 85/151 (2023.02 - EP US); H10K 85/215 (2023.02 - EP US); Y02E 10/549 (2013.01 - EP US); Y02P 70/50 (2015.11 - EP US)
Citation (search report)
- [X] US 2005263756 A1 20051201 - YATSUNAMI RYUICHI [JP], et al
- [X] US 5596208 A 19970121 - DODABALAPUR ANANTH [US], et al
- [Y] US 2005285107 A1 20051229 - KOO JAE-BON [KR], et al
- [XY] KUWAHARA EIJI ET AL: "Fabrication of ambipolar field-effect transistor device with heterostructure of C60 and pentacene", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 85, no. 20, 15 November 2004 (2004-11-15), pages 4765 - 4767, XP012063458, ISSN: 0003-6951
- [Y] HU Y ET AL: "PHOTOTRANSISTOR PROPERTIES OF PENTACENE ORGANIC TRANSISTORS WITH POLY(METHLY METHACRYLATE) DIELECTRIC LAYER", JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOCIETY OF APPLIED PHYSICS, TOKYO, JP, vol. 45, no. 1, 13 January 2006 (2006-01-13), pages L96 - L98, XP001245483, ISSN: 0021-4922
- [X] THOMAS N JACKSON ET AL: "Organic Thin-Film Transistors for Organic Light-Emitting Flat-Panel Display Backplanes", IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, IEEE SERVICE CENTER, PISCATAWAY, NJ, US, vol. 4, no. 1, February 1998 (1998-02-01), XP011062341, ISSN: 1077-260X
- [X] JUNG TAEHO ET AL: "Nanoscale n-channel and ambipolar organic field-effect transistors", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 88, no. 18, 1 May 2006 (2006-05-01), pages 183102 - 183102, XP012081437, ISSN: 0003-6951
- [DA] HAMILTON M C ET AL: "Thin-Film Organic Polymer Phototransistors", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE SERVICE CENTER, PISACATAWAY, NJ, US, vol. 51, no. 6, June 2004 (2004-06-01), pages 877 - 885, XP011113167, ISSN: 0018-9383
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR
Designated extension state (EPC)
AL BA HR MK RS
DOCDB simple family (publication)
EP 1852923 A2 20071107; EP 1852923 A3 20080514; CN 101068040 A 20071107; GB 0608730 D0 20060614; GB 2437768 A 20071107; JP 2007300112 A 20071115; KR 20070107606 A 20071107; US 2007257256 A1 20071108
DOCDB simple family (application)
EP 07251595 A 20070413; CN 200710102359 A 20070430; GB 0608730 A 20060503; JP 2007118292 A 20070427; KR 20070042600 A 20070502; US 78538407 A 20070417