EP 1854148 A1 20071114 - METHOD FOR METALLISATION OF A SEMICONDUCTOR DEVICE
Title (en)
METHOD FOR METALLISATION OF A SEMICONDUCTOR DEVICE
Title (de)
VERFAHREN ZUR METALLISIERUNG EINES HALBLEITERBAUELEMENTS
Title (fr)
PROCEDE DE METALLISSATION D'UN DISPOSITIF SEMI-CONDUCTEUR
Publication
Application
Priority
- FR 2006050020 W 20060118
- FR 0550173 A 20050120
Abstract (en)
[origin: WO2006077342A1] The invention relates to a method for metallisation of a semiconductor device (100). Said method comprises the following steps: a) metallisation of a set of collector fingers (8.1 to 8.n) with a screen printing paste called low temperature on at least one face (17), called the front face of the semiconductor device (100), b) carrying out a sintering, of the screen printing paste forming the set of metallised collector fingers (8.1 to 8.n) at a temperature below that which damages the semiconductor device (100), by means of pressing said collector fingers (8.1 to 8.n) with a press (10), c) metallisation of at least one collector bus (16a, 16b) for the set of metallised collector fingers (8.1 à 8.n), which electrically connects said collector fingers to each other (8.1 to 8.n) using a screen printing paste called low temperature .
IPC 8 full level
H01L 31/0224 (2006.01); H01L 27/142 (2006.01)
CPC (source: EP US)
H01L 31/022425 (2013.01 - EP US); H01L 31/0747 (2013.01 - EP US); Y02E 10/50 (2013.01 - EP US); Y10T 428/24479 (2015.01 - EP US)
Citation (search report)
See references of WO 2006077342A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
FR 2880986 A1 20060721; FR 2880986 B1 20070302; EP 1854148 A1 20071114; JP 2008529264 A 20080731; JP 5336086 B2 20131106; US 2008087319 A1 20080417; US 7947527 B2 20110524; WO 2006077342 A1 20060727
DOCDB simple family (application)
FR 0550173 A 20050120; EP 06709407 A 20060118; FR 2006050020 W 20060118; JP 2007551713 A 20060118; US 81372106 A 20060118