EP 1859478 A1 20071128 - METHOD OF PRODUCING A LIGHT-EMITTING DIODE COMPRISING A NANOSTRUCTURED PN JUNCTION AND DIODE THUS OBTAINED
Title (en)
METHOD OF PRODUCING A LIGHT-EMITTING DIODE COMPRISING A NANOSTRUCTURED PN JUNCTION AND DIODE THUS OBTAINED
Title (de)
VERFAHREN ZUR HERSTELLUNG EINER LEUCHTDIODE MIT NANOSTRUKTURIERTEM PN-ÜBERGANG UND SO ERHALTENE DIODE
Title (fr)
PROCEDE DE FABRICATION D UNE DIODE ELECTROLUMINESCENTE A JONCTION PN NANOSTRUCTUREE ET DIODE OBTENUE PAR UN TEL PROCEDE
Publication
Application
Priority
- FR 2006000414 W 20060223
- FR 0502530 A 20050315
Abstract (en)
[origin: WO2006097591A1] The invention relates to a light-emitting diode comprising a nanostructured PN junction, which is made from a semi-conductor substrate (1) which is doped with a first dopant and which is covered with a thin dielectric layer (2). Subsequently, an amorphous thin film comprising a semi-conductor material that has been doped with a second dopant of the opposite type to the first is deposited on the surface of the thin dielectric layer (2). The assembly is then subjected to heat treatment in order to form a plurality of nanometric islands (5) that are made from a semi-conductor material that has been doped with the second dopant in the thin dielectric layer (2) from the amorphous thin film. The aforementioned islands (5) are intended to be epitaxial with the substrate (1) in order to form a plurality of nanometric PN junctions. An additional thin film (6) is subsequently formed by means of epitaxial growth from said islands (5).
IPC 8 full level
H01L 21/20 (2006.01); H01L 33/00 (2006.01)
CPC (source: EP US)
B82Y 10/00 (2013.01 - EP US); H01L 21/02381 (2013.01 - EP US); H01L 21/02488 (2013.01 - EP US); H01L 21/02513 (2013.01 - EP US); H01L 21/02532 (2013.01 - EP US); H01L 21/02573 (2013.01 - EP US); H01L 21/02601 (2013.01 - EP US); Y10S 977/774 (2013.01 - EP US); Y10S 977/932 (2013.01 - EP US)
Citation (search report)
See references of WO 2006097591A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2006097591 A1 20060921; CN 101142658 A 20080312; EP 1859478 A1 20071128; FR 2883418 A1 20060922; FR 2883418 B1 20070601; JP 2008533732 A 20080821; TW 200633277 A 20060916; US 2009072245 A1 20090319; US 7736919 B2 20100615
DOCDB simple family (application)
FR 2006000414 W 20060223; CN 200680008230 A 20060223; EP 06709371 A 20060223; FR 0502530 A 20050315; JP 2008501349 A 20060223; TW 95106238 A 20060224; US 88454006 A 20060223