EP 1861916 A4 20130327 - METTALIC DISPERSION AND FORMATION OF COMPOUND FILM FOR PHOTOVOLTAIC DEVICE ACTIVE LAYER
Title (en)
METTALIC DISPERSION AND FORMATION OF COMPOUND FILM FOR PHOTOVOLTAIC DEVICE ACTIVE LAYER
Title (de)
METALLDISPERSION UND BILDUNG EINES VERBUNDFILMES FÜR EINE AKTIVE SCHICHT EINER PHOTOVOLTAISCHEN VORRICHTUNG
Title (fr)
DISPERSION METALLIQUE ET FORMATION D'UN FILM DE COMPOSE POUR COUCHE ACTIVE DE DISPOSITIF PHOTOVOLTAIQUE
Publication
Application
Priority
- US 2006009534 W 20060316
- US 8116305 A 20050316
- US 24349205 A 20051003
Abstract (en)
[origin: WO2006101986A2] A compound film may be formed by formulating a mixture of elemental nanoparticles composed of the IB, the IIIA, and, optionally, the VIA group of elements having a controlled overall composition. The nanoparticle mixture is combined with a suspension of nanoglobules of gallium to form a dispersion. The dispersion may be deposited onto a substrate to form a layer on the substrate. The layer may then be reacted in a suitable atmosphere to form the compound film. The compound film may be used as a light-absorbing layer in a photovoltaic device. Optionally, the compound film for an active layer of a photovoltaic device may be formed in two or more sub-layers. A first sub-layer having a first component of the active layer may be formed on a substrate with a first process. A second sub-layer including a second component of the active layer may then be formed using a second process such that the first sublayer is disposed between the second sub-layer and the substrate. The second component may have a different chemical composition than the first component. The first and/or second sub-layer may comprise one or more components in the form of particles and/or globules. This procedure may be repeated any number of times for any number of sub-layers so that active layer can be built up sequentially. The different chemical compositions of the components in the sub-layers can provide the active layer with a graded bandgap.
IPC 8 full level
C23C 18/02 (2006.01); C23C 18/12 (2006.01); H01L 21/02 (2006.01); H01L 21/368 (2006.01); H01L 31/032 (2006.01); H01L 31/0749 (2012.01)
CPC (source: EP)
C23C 18/02 (2013.01); C23C 18/1216 (2013.01); C23C 18/1258 (2013.01); C23C 18/1279 (2013.01); C23C 18/1287 (2013.01); H01L 21/02568 (2013.01); H01L 21/02601 (2013.01); H01L 21/02628 (2013.01); H01L 31/0322 (2013.01); H01L 31/0749 (2013.01); Y02E 10/541 (2013.01)
Citation (search report)
- [XI] WO 02084708 A2 20021024 - BASOL BULENT M [US]
- [XI] EP 0978882 A2 20000209 - INT SOLAR ELECTRIC TECHNOLOGY [US]
- See references of WO 2006101986A2
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2006101986 A2 20060928; WO 2006101986 A3 20090430; EP 1861916 A2 20071205; EP 1861916 A4 20130327
DOCDB simple family (application)
US 2006009534 W 20060316; EP 06748410 A 20060316