EP 1871926 A1 20080102 - METHOD FOR GROWING THIN SEMICONDUCTOR RIBBONS
Title (en)
METHOD FOR GROWING THIN SEMICONDUCTOR RIBBONS
Title (de)
VERFAHREN ZUM ZIEHEN VON DÜNNEN HALBLEITERBÄNDERN
Title (fr)
PROCEDE DE TIRAGE DE RUBANS DE SEMI-CONDUCTEUR DE FAIBLE EPAISSEUR
Publication
Application
Priority
- FR 2006050185 W 20060301
- FR 0551032 A 20050422
Abstract (en)
[origin: WO2006111668A1] The invention relates to a method for growing at least one ribbon made of a semiconductor material (40-42) according to which two parallel and interspaced filaments (24-26) vertically pass through, upward and at a continuous speed, the surface of a bath of this molten semiconductor material, the ribbon (40-42) being formed from a meniscus located between the filaments and essentially at the level of said surface. According to the invention, a supporting strip (22) is placed between the filaments (24-26), the supporting strip (22) vertically passing through, upward and at a continuous speed, the surface of the molten semiconductor material at the same speed as the filaments, the semiconductor ribbon (40-42) thus being formed on one of the two sides of the supporting strip and being supported by this side. The invention serves to produce polycrystalline silicon ribbons for manufacturing photovoltaic cells.
IPC 8 full level
C30B 15/00 (2006.01); C30B 15/24 (2006.01); C30B 29/06 (2006.01)
CPC (source: EP US)
C30B 15/22 (2013.01 - EP US); C30B 15/34 (2013.01 - EP US); C30B 29/06 (2013.01 - EP US); C30B 29/08 (2013.01 - EP US); C30B 29/42 (2013.01 - EP US); H01L 31/18 (2013.01 - EP US)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2006111668 A1 20061026; AU 2006238527 A1 20061026; CN 101128625 A 20080220; EP 1871926 A1 20080102; FR 2884834 A1 20061027; FR 2884834 B1 20070608; JP 2008536793 A 20080911; US 2009050051 A1 20090226
DOCDB simple family (application)
FR 2006050185 W 20060301; AU 2006238527 A 20060301; CN 200680005915 A 20060301; EP 06726209 A 20060301; FR 0551032 A 20050422; JP 2008507134 A 20060301; US 88424206 A 20060301