EP 1877462 A1 20080116 - SEMICONDUCTORS CONTAINING PERFLUOROETHER ACYL OLIGOTHIOPHENE COMPOUNDS
Title (en)
SEMICONDUCTORS CONTAINING PERFLUOROETHER ACYL OLIGOTHIOPHENE COMPOUNDS
Title (de)
HALBLEITER, ENTHALTEND PERFLUORETHERACYLOLIGOTHIOPHEN-VERBINDUNGEN
Title (fr)
SEMI-CONDUCTEURS CONTENANT DES COMPOSES OLIGOTHIOPHENE ACYLES A SUBSTITUTION PERFLUOROETHER
Publication
Application
Priority
- US 2006006545 W 20060223
- US 7597805 A 20050309
- US 7626805 A 20050309
Abstract (en)
[origin: WO2006098859A1] Semiconductor devices are described that include a semiconductor layer that comprises a perfluoroether acyl oligothiophene compound, preferably an a,?-bis-perfluoroether acyl oligothiophene compound. Additionally, methods of making semiconductor devices are described that include depositing a semiconductor layer that contains a perfluoroether acyl oligothiophene compound, preferably an a,?-bis(2- perfluoroether acyl oligothiophene compound.
IPC 8 full level
C07D 333/22 (2006.01); C07D 333/28 (2006.01); C08G 61/12 (2006.01); H01L 51/00 (2006.01)
CPC (source: EP KR)
B82Y 30/00 (2013.01 - EP); C07D 333/22 (2013.01 - EP KR); C07D 333/28 (2013.01 - EP KR); C08G 61/12 (2013.01 - KR); H10K 85/113 (2023.02 - EP); H10K 85/655 (2023.02 - EP); H10K 99/00 (2023.02 - KR); H10K 10/466 (2023.02 - EP); H10K 10/474 (2023.02 - EP)
Citation (search report)
See references of WO 2006098859A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2006098859 A1 20060921; EP 1877462 A1 20080116; JP 2008535794 A 20080904; KR 20070108398 A 20071109
DOCDB simple family (application)
US 2006006545 W 20060223; EP 06735988 A 20060223; JP 2008500736 A 20060223; KR 20077020650 A 20070910