EP 1877530 A2 20080116 - REMOVAL OF HIGH-DOSE ION-IMPLANTED PHOTORESIST USING SELF-ASSEMBLED MONOLAYERS IN SOLVENT SYSTEMS
Title (en)
REMOVAL OF HIGH-DOSE ION-IMPLANTED PHOTORESIST USING SELF-ASSEMBLED MONOLAYERS IN SOLVENT SYSTEMS
Title (de)
ENTFERNEN VON HOCHIONENDOTIERTEM PHOTOLACK MIT SELBSTORGANISIERTEN MONOSCHICHTEN IN LÖSUNGSMITTELSYSTEMEN
Title (fr)
ELIMINATION DE PHOTORESINE A IMPLANTATION IONIQUE HAUTE DOSE AU MOYEN DE MONOCOUCHES AUTO-ASSEMBLEES DANS DES SYSTEMES DE SOLVANTS
Publication
Application
Priority
- US 2006013430 W 20060410
- US 67185105 P 20050415
Abstract (en)
[origin: WO2006113222A2] A method and self assembled monolayer (SAM)-containing compositions for removing bulk and hardened photoresist material from microelectronic devices have been developed. The SAM-containing composition includes at least one solvent, at least one catalyst, at least one SAM component, and optionally a surfactant. The SAM-containing compositions effectively remove the hardened photoresist material while simultaneously passivating the underlying silicon-containing layer(s) in a one step process.
IPC 8 full level
H01L 21/311 (2006.01); B82Y 30/00 (2011.01); C11D 3/16 (2006.01); C11D 3/28 (2006.01); C11D 3/30 (2006.01); C11D 3/43 (2006.01); C11D 7/22 (2006.01); C11D 7/32 (2006.01); C11D 7/50 (2006.01); C11D 11/00 (2006.01); G03F 7/42 (2006.01)
CPC (source: EP KR)
B82Y 30/00 (2013.01 - EP); C11D 3/162 (2013.01 - EP); C11D 3/28 (2013.01 - EP); C11D 3/30 (2013.01 - EP); C11D 3/43 (2013.01 - EP); C11D 7/22 (2013.01 - EP); C11D 7/3209 (2013.01 - EP); C11D 7/5004 (2013.01 - EP); G03F 7/422 (2013.01 - EP); G03F 7/425 (2013.01 - EP); H01L 21/228 (2013.01 - KR); H01L 21/31133 (2013.01 - EP); C11D 2111/22 (2024.01 - EP); H01L 21/266 (2013.01 - EP)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR
Designated extension state (EPC)
AL BA HR MK YU
DOCDB simple family (publication)
WO 2006113222 A2 20061026; WO 2006113222 A3 20071108; CN 101198683 A 20080611; CN 101198683 B 20110914; EP 1877530 A2 20080116; EP 1877530 A4 20100609; JP 2008538013 A 20081002; KR 20070121845 A 20071227; SG 161280 A1 20100527; TW 200700916 A 20070101
DOCDB simple family (application)
US 2006013430 W 20060410; CN 200680021622 A 20060410; EP 06749725 A 20060410; JP 2008506595 A 20060410; KR 20077026503 A 20071114; SG 2010026391 A 20060410; TW 95113365 A 20060414