EP 1879234 A2 20080116 - Low temperature sol-gel silicates as dielectrics or planarization layers for thin film transistors
Title (en)
Low temperature sol-gel silicates as dielectrics or planarization layers for thin film transistors
Title (de)
Niedrigtemperatur-Sol-Gel-Silicate als Dielektrika oder Planarisierungsschichten für Dünnschichttransistoren
Title (fr)
Silicates sol-gel à faible température en tant que diélectriques ou couches de planarisation pour des transistors à couche mince
Publication
Application
Priority
- US 83116106 P 20060714
- US 77357007 A 20070705
Abstract (en)
Traditionally, sol-gel silicates have been reported as being high temperature processable at 400C to give reasonably dense films that showed good leakage current densities (<5 x 10 -8 A/cm 2 ). Recently we have discovered that we are able to prepare films from particular combinations of sol-gel silicate precursors that cure at 135°C to 250°C and give good leakage current density values (9 x 10 -9 A/cm 2 to 1 x 10 -10 A/cm 2 ) as well, despite the decrease in processing temperatures. These are some of the first examples of silicates being cured at lower temperatures where the leakage current density is sufficient low to be used as low temperature processed or solution processable or printable gate dielectrics for flexible or lightweight thin film transistors. These formulations may also be used in the planarization of stainless steel foils for thin film transistors and other electronic devices.
IPC 8 full level
H01L 21/77 (2006.01); H01L 29/49 (2006.01)
CPC (source: EP KR US)
H01L 21/02126 (2013.01 - KR US); H01L 21/02216 (2013.01 - KR US); H01L 21/02282 (2013.01 - KR US); H01L 21/02362 (2013.01 - EP KR US); H01L 21/3122 (2013.01 - US); H01L 21/316 (2013.01 - US); H01L 21/324 (2013.01 - KR); H01L 27/1248 (2013.01 - EP US); H01L 27/1292 (2013.01 - EP US); H01L 29/4908 (2013.01 - EP US); H01L 29/78603 (2013.01 - EP US); H01L 29/78606 (2013.01 - KR); H01L 29/78618 (2013.01 - KR); H10K 10/472 (2023.02 - EP US); H01L 21/02126 (2013.01 - EP); H01L 21/02164 (2013.01 - EP); H01L 21/02216 (2013.01 - EP); H01L 21/02282 (2013.01 - EP); H10K 77/10 (2023.02 - EP US)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR
Designated extension state (EPC)
AL BA HR MK RS
DOCDB simple family (publication)
EP 1879234 A2 20080116; EP 1879234 A3 20090128; JP 2008124431 A 20080529; KR 20080007192 A 20080117; SG 139664 A1 20080229; TW 200814387 A 20080316; US 2008012074 A1 20080117
DOCDB simple family (application)
EP 07112365 A 20070712; JP 2007185644 A 20070717; KR 20070071236 A 20070716; SG 2007052020 A 20070712; TW 96125675 A 20070713; US 77357007 A 20070705