EP 1884995 A3 20090107 - Wiring substrate and manufacturing method thereof, and semiconductor device

Title (en)

Wiring substrate and manufacturing method thereof, and semiconductor device

Title (de)

Schaltungssubstrat, Herstellungsverfahren dafür und Halbleitervorrichtung

Title (fr)

Substrat de câblage et son procédé de fabrication, et dispositif semiconducteur

Publication

EP 1884995 A3 20090107 (EN)

Application

EP 07113606 A 20070801

Priority

JP 2006209845 A 20060801

Abstract (en)

[origin: EP1884995A2] A wiring substrate (11) includes a first insulation layer (14), a connection terminal (15), a second insulation layer (21), a via (24), and a wiring pattern (16). The connection terminal (15) is disposed in the first insulation layer (14) so as to be exposed from a first main surface (14B) of the first insulation layer (14), and is electrically connected with a semiconductor chip (12). The second insulation layer (21) is disposed on a second main surface (14C) of the first insulation layer (14) situated on the opposite side from the first main surface (14B). The via (24) is disposed in the second insulation layer (21), and is electrically connected with the connection terminal (15). The via (24) is separated from the connection terminal (15). The wiring pattern (16) is disposed on the second main surface (14C) of the first insulation layer (14) and electrically connects the connection terminal (15) and the via (24).

IPC 8 full level

H01L 23/498 (2006.01); H01L 21/48 (2006.01)

CPC (source: EP US)

H01L 21/4853 (2013.01 - EP US); H01L 21/563 (2013.01 - EP US); H01L 23/49816 (2013.01 - EP US); H01L 23/49822 (2013.01 - EP US); H01L 23/49838 (2013.01 - EP US); H01L 24/16 (2013.01 - EP US); H05K 3/4007 (2013.01 - EP US); H05K 3/4682 (2013.01 - EP US); H01L 21/6835 (2013.01 - EP US); H01L 23/49827 (2013.01 - EP US); H01L 2221/68345 (2013.01 - EP US); H01L 2224/0554 (2013.01 - EP US); H01L 2224/0557 (2013.01 - EP US); H01L 2224/05571 (2013.01 - EP US); H01L 2224/05573 (2013.01 - EP US); H01L 2224/13099 (2013.01 - EP US); H01L 2224/16225 (2013.01 - EP US); H01L 2224/73203 (2013.01 - EP US); H01L 2924/00014 (2013.01 - EP US); H01L 2924/01006 (2013.01 - EP US); H01L 2924/01029 (2013.01 - EP US); H01L 2924/01033 (2013.01 - EP US); H01L 2924/01078 (2013.01 - EP US); H01L 2924/01079 (2013.01 - EP US); H01L 2924/014 (2013.01 - EP US); H01L 2924/12042 (2013.01 - EP US); H05K 3/108 (2013.01 - EP US); H05K 3/205 (2013.01 - EP US); H05K 3/28 (2013.01 - EP US); H05K 2201/0367 (2013.01 - EP US); H05K 2201/09527 (2013.01 - EP US); Y10T 29/4913 (2015.01 - EP US); Y10T 29/49165 (2015.01 - EP US)

C-Set (source: EP US)

Citation (search report)

[XY] US 2006046350 A1 20060302 - JIANG TONGBI [US], et al
[X] EP 1091406 A2 20010411 - NEC CORP [JP]
[X] US 2004115862 A1 20040617 - KUNG WEI-CHUN [TW], et al
[Y] EP 0543411 A2 19930526 - SHARP KK [JP]
[A] US 6049122 A 20000411 - YONEDA YOSHIHIRO [JP]
[A] US 2004040742 A1 20040304 - ISHIZAKI HIROYUKI [JP]
[A] US 6242279 B1 20010605 - HO CHUNG W [US], et al

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR

Designated extension state (EPC)

AL BA HR MK RS

DOCDB simple family (publication)

EP 1884995 A2 20080206; EP 1884995 A3 20090107; CN 101222818 A 20080716; JP 2008041694 A 20080221; JP 5183893 B2 20130417; KR 101349725 B1 20140110; KR 20080012169 A 20080211; TW 200810066 A 20080216; TW I451548 B 20140901; US 2008029297 A1 20080207; US 7943863 B2 20110517

DOCDB simple family (application)

EP 07113606 A 20070801; CN 200710129659 A 20070801; JP 2006209845 A 20060801; KR 20070075463 A 20070727; TW 96128154 A 20070801; US 88219807 A 20070731