EP 1886353 A1 20080213 - FIELD EFFECT TRANSISTOR
Title (en)
FIELD EFFECT TRANSISTOR
Title (de)
FELDEFFEKTTRANSISTOR
Title (fr)
TRANSISTOR A EFFET DE CHAMP
Publication
Application
Priority
- EP 2006061320 W 20060405
- DE 102005023361 A 20050520
Abstract (en)
[origin: WO2006122851A1] The invention relates to a field effect transistor which comprises a source electrode, a drain electrode and a gate electrode. Said field effect transistor comprises a connection between the gate electrode and the source electrode or between the gate electrode and the drain electrode or between the gate electrode and the substrate which carries a leakage current.
IPC 8 full level
H01L 29/51 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01)
CPC (source: EP US)
H01L 27/0727 (2013.01 - EP US); H01L 29/51 (2013.01 - EP US); H01L 21/31155 (2013.01 - EP US)
Designated contracting state (EPC)
DE IT
DOCDB simple family (publication)
DE 102005023361 A1 20061123; CN 101180735 A 20080514; EP 1886353 A1 20080213; JP 2008546171 A 20081218; TW 200711129 A 20070316; US 2009302397 A1 20091210; WO 2006122851 A1 20061123
DOCDB simple family (application)
DE 102005023361 A 20050520; CN 200680017271 A 20060405; EP 06725556 A 20060405; EP 2006061320 W 20060405; JP 2008511663 A 20060405; TW 95117578 A 20060518; US 92086406 A 20060405