Global Patent Index - EP 1886353 A1

EP 1886353 A1 20080213 - FIELD EFFECT TRANSISTOR

Title (en)

FIELD EFFECT TRANSISTOR

Title (de)

FELDEFFEKTTRANSISTOR

Title (fr)

TRANSISTOR A EFFET DE CHAMP

Publication

EP 1886353 A1 20080213 (DE)

Application

EP 06725556 A 20060405

Priority

  • EP 2006061320 W 20060405
  • DE 102005023361 A 20050520

Abstract (en)

[origin: WO2006122851A1] The invention relates to a field effect transistor which comprises a source electrode, a drain electrode and a gate electrode. Said field effect transistor comprises a connection between the gate electrode and the source electrode or between the gate electrode and the drain electrode or between the gate electrode and the substrate which carries a leakage current.

IPC 8 full level

H01L 29/51 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01)

CPC (source: EP)

H01L 27/0727 (2013.01); H01L 29/51 (2013.01); H01L 21/31155 (2013.01)

Citation (search report)

See references of WO 2006122851A1

Designated contracting state (EPC)

DE IT

DOCDB simple family (publication)

DE 102005023361 A1 20061123; CN 101180735 A 20080514; EP 1886353 A1 20080213; JP 2008546171 A 20081218; TW 200711129 A 20070316; US 2009302397 A1 20091210; WO 2006122851 A1 20061123

DOCDB simple family (application)

DE 102005023361 A 20050520; CN 200680017271 A 20060405; EP 06725556 A 20060405; EP 2006061320 W 20060405; JP 2008511663 A 20060405; TW 95117578 A 20060518; US 92086406 A 20060405