Global Patent Index - EP 1888802 B1

EP 1888802 B1 20131218 - METHOD FOR SOLID STATE GROWING OF SINGLE-CRYSTAL METALS

Title (en)

METHOD FOR SOLID STATE GROWING OF SINGLE-CRYSTAL METALS

Title (de)

VERFAHREN ZUM ZIEHEN VON EINKRISTALLINEN METALLEN IM FESTEN ZUSTAND

Title (fr)

PROCEDE DE CROISSANCE EN PHASE SOLIDE DES METAUX MONOCRISTALLINS

Publication

EP 1888802 B1 20131218 (EN)

Application

EP 06752075 A 20060503

Priority

  • US 2006016771 W 20060503
  • US 68027305 P 20050512

Abstract (en)

[origin: WO2006124266A2] A method for growing large single crystals of metals is disclosed. A polycrystalline form of a metal specimen is initially heated in a non-oxidizing environment. A minimum plastic strain is then applied to the heated metal specimen to initiate the growth of a selected grain within the heated metal specimen. Additional plastic strain is subsequently applied to the heated metal specimen to propagate the growth of the selected grain to become a large single crystal.

IPC 8 full level

C21D 8/12 (2006.01); C22C 45/00 (2006.01); C30B 15/00 (2006.01); C30B 28/02 (2006.01)

CPC (source: EP KR US)

C30B 1/02 (2013.01 - EP US); C30B 1/04 (2013.01 - EP US); C30B 13/20 (2013.01 - KR); C30B 15/00 (2013.01 - KR); C30B 28/02 (2013.01 - KR); C30B 29/02 (2013.01 - EP US); Y10T 117/10 (2015.01 - EP US)

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

DOCDB simple family (publication)

WO 2006124266 A2 20061123; WO 2006124266 A3 20070208; CN 101213318 A 20080702; CN 101213318 B 20121017; EP 1888802 A2 20080220; EP 1888802 A4 20090701; EP 1888802 B1 20131218; JP 2008540319 A 20081120; JP 5106387 B2 20121226; KR 101009314 B1 20110118; KR 20080019224 A 20080303; US 2009120351 A1 20090514; US 7922812 B2 20110412

DOCDB simple family (application)

US 2006016771 W 20060503; CN 200680024342 A 20060503; EP 06752075 A 20060503; JP 2008511166 A 20060503; KR 20077029075 A 20060503; US 93695407 A 20071108