EP 1890336 A1 20080220 - High-voltage MOS transistor device and method of making the same
Title (en)
High-voltage MOS transistor device and method of making the same
Title (de)
Hochspannungs-MOS-Transistoranordnung und Verfahren zu deren Herstellung
Title (fr)
Dispositif à transistor MOS à haute tension et sa méthode de fabrication
Publication
Application
Priority
EP 06017292 A 20060818
Abstract (en)
A substrate (1) is provided with a deep body well (2), a counter drift well region (3), a drain well region (4) in the vicinity of the drain region (8), a drift region (5), a channel well region (6) and a source region (7). A gate electrode (9) and a gate dielectric (10) are arranged above an area provided as a channel region between the source region (7) and the drift region (5). The drain well region (4) enables the application of an especially deep body well (2) while providing an extended vertical distance for the voltage drop. A high blocking voltage, a precisely short channel and a well-defined threshold voltage are obtained. The structure of the wells is appropriate for the integration of further high-voltage devices, especially NMOS transistors.
IPC 8 full level
H01L 29/78 (2006.01); H01L 21/336 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01)
CPC (source: EP US)
H01L 29/0623 (2013.01 - EP); H01L 29/0634 (2013.01 - EP); H01L 29/0847 (2013.01 - EP US); H01L 29/0878 (2013.01 - EP US); H01L 29/1083 (2013.01 - EP); H01L 29/66659 (2013.01 - EP); H01L 29/7835 (2013.01 - EP); H01L 29/0646 (2013.01 - EP); H01L 29/1095 (2013.01 - EP); H01L 29/42368 (2013.01 - EP); H01L 29/7816 (2013.01 - EP)
Citation (applicant)
- US 6677210 B1 20040113 - HEBERT FRANCOIS [US]
- V. KHEMKA ET AL., IEEE ELECTRON DEVICE LETTERS, vol. 25, no. 12, 2004, pages 804 - 806
Citation (search report)
- [X] US 6677210 B1 20040113 - HEBERT FRANCOIS [US]
- [A] US 2002072186 A1 20020613 - EVANS IVOR ROBERT [GB]
- [X] KHEMKA V ET AL: "NOVEL FRESURF LDMOSFET DEVICES WITH IMPROVED BVDSS-RDSON", IEEE ELECTRON DEVICE LETTERS, IEEE SERVICE CENTER, NEW YORK, NY, US, vol. 25, no. 12, 12 December 2004 (2004-12-12), pages 804 - 806, XP001212073, ISSN: 0741-3106
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR
Designated extension state (EPC)
AL BA HR MK YU
DOCDB simple family (publication)
EP 1890336 A1 20080220; EP 1890336 B1 20111102; AT E532216 T1 20111115; WO 2008020072 A1 20080221
DOCDB simple family (application)
EP 06017292 A 20060818; AT 06017292 T 20060818; EP 2007058566 W 20070817