EP 1890336 B1 20111102 - High-voltage MOS transistor device and method of making the same
Title (en)
High-voltage MOS transistor device and method of making the same
Title (de)
Hochspannungs-MOS-Transistoranordnung und Verfahren zu deren Herstellung
Title (fr)
Dispositif à transistor MOS à haute tension et sa méthode de fabrication
Publication
Application
Priority
EP 06017292 A 20060818
Abstract (en)
[origin: EP1890336A1] A substrate (1) is provided with a deep body well (2), a counter drift well region (3), a drain well region (4) in the vicinity of the drain region (8), a drift region (5), a channel well region (6) and a source region (7). A gate electrode (9) and a gate dielectric (10) are arranged above an area provided as a channel region between the source region (7) and the drift region (5). The drain well region (4) enables the application of an especially deep body well (2) while providing an extended vertical distance for the voltage drop. A high blocking voltage, a precisely short channel and a well-defined threshold voltage are obtained. The structure of the wells is appropriate for the integration of further high-voltage devices, especially NMOS transistors.
IPC 8 full level
H01L 29/78 (2006.01); H01L 21/336 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01)
CPC (source: EP US)
H01L 29/0623 (2013.01 - EP); H01L 29/0634 (2013.01 - EP); H01L 29/0847 (2013.01 - EP US); H01L 29/0878 (2013.01 - EP US); H01L 29/1083 (2013.01 - EP); H01L 29/66659 (2013.01 - EP); H01L 29/7835 (2013.01 - EP); H01L 29/0646 (2013.01 - EP); H01L 29/1095 (2013.01 - EP); H01L 29/42368 (2013.01 - EP); H01L 29/7816 (2013.01 - EP)
Citation (examination)
- WO 0111681 A1 20010215 - SPECTRIAN INC [US]
- DE 102004014928 A1 20051013 - AUSTRIAMICROSYSTEMS AG [AT]
- BOSE A; KHEMKA V; PARTHASARATHY V; RONGHUA ZHU: "A floating resurf (fresurf) ld-mosfet device concept", IEEE ELECTRON DEVICE LETTERS, vol. 24, no. 10, 1 October 2003 (2003-10-01), IEEE SERVICE CENTER, NEW YORK, NY, US, pages 664 - 666, XP011101817
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
EP 1890336 A1 20080220; EP 1890336 B1 20111102; AT E532216 T1 20111115; WO 2008020072 A1 20080221
DOCDB simple family (application)
EP 06017292 A 20060818; AT 06017292 T 20060818; EP 2007058566 W 20070817