EP 1891682 A1 20080227 - PHOTODIODE WITH A REDUCED DARK CURRENT AND METHOD FOR THE PRODUCTION THEREOF
Title (en)
PHOTODIODE WITH A REDUCED DARK CURRENT AND METHOD FOR THE PRODUCTION THEREOF
Title (de)
PHOTODIODE MIT VERRINGERTEM DUNKELSTROM UND VERFAHREN ZUR HERSTELLUNG
Title (fr)
PHOTODIODE PRESENTANT UN COURANT D'OBSCURITE REDUIT ET PROCEDE DE FABRICATION
Publication
Application
Priority
- EP 2006004027 W 20060428
- DE 102005027456 A 20050614
Abstract (en)
[origin: WO2006133765A1] The invention relates to a photodiode comprising a PN junction between the doping region (DG) created in the surface of a crystalline semiconductor substrate and a semiconductor layer (HS) deposited thereover. An additional doping (GD) is provided in the edge of the doped region, and used to extend the PN junction deeper into the substrate (SU). The thus increased distance between the PN junction and irregularities on phase boundaries enables the dark current to be reduced inside the photodiode.
IPC 8 full level
H01L 31/18 (2006.01); H01L 31/103 (2006.01)
CPC (source: EP US)
H01L 31/1035 (2013.01 - EP US); H01L 31/1812 (2013.01 - EP US); Y02E 10/50 (2013.01 - US)
Citation (search report)
See references of WO 2006133765A1
Designated contracting state (EPC)
DE FR
DOCDB simple family (publication)
WO 2006133765 A1 20061221; DE 102005027456 A1 20061228; DE 102005027456 B4 20081016; EP 1891682 A1 20080227; US 2010038678 A1 20100218; US 8134179 B2 20120313
DOCDB simple family (application)
EP 2006004027 W 20060428; DE 102005027456 A 20050614; EP 06742752 A 20060428; US 92225506 A 20060428