EP 1895027 A1 20080305 - METHOD OF GROWING SILICON SINGLE CRYSTAL AND PROCESS FOR PRODUCING SILICON WAFER
Title (en)
METHOD OF GROWING SILICON SINGLE CRYSTAL AND PROCESS FOR PRODUCING SILICON WAFER
Title (de)
VERFAHREN ZUM ZIEHEN EINES SILICIUMEINKRISTALLS UND VERFARHEN ZUR HERSTELLUNG EINES SILICIUMWAFERS
Title (fr)
PROCÉDÉ PERMETTANT DE FAIRE POUSSER UN CRISTAL UNIQUE DE SILICIUM ET PROCESSUS POUR PRODUIRE UNE TRANCHE DE SILICIUM
Publication
Application
Priority
- JP 2005020434 W 20051108
- JP 2005179997 A 20050620
Abstract (en)
In a method for growing a silicon single crystal, a silicon single crystal is grown by the Czochralski method to have an oxygen concentration of 12×10 17 to 18×10 17 atoms/cm 3 on ASTM-F 121 1979. A mixed gas of an inert gas and a gaseous substance containing hydrogen atoms is used as an atmospheric gas for growing the single crystal. A temperature of the silicon single crystal is controlled during the growth of the crystal such that the ratio Gc/Ge of an axial thermal gradient Gc at the central portion of the crystal between its melting point and its temperature of 1350°C to an axial thermal gradient Ge at the periphery of the crystal between its melting point and its temperature of 1350°C is 1.1 to 1.4. The axial thermal gradient Gc at the central portion of the crystal is 3.0 to 3.5°C/mm.
IPC 8 full level
C30B 15/20 (2006.01); C30B 29/06 (2006.01)
CPC (source: EP KR)
C30B 15/20 (2013.01 - EP KR); C30B 15/203 (2013.01 - EP); C30B 29/06 (2013.01 - EP)
Designated contracting state (EPC)
DE
DOCDB simple family (publication)
EP 1895027 A1 20080305; EP 1895027 A4 20090624; EP 1895027 B1 20130724; CN 101198727 A 20080611; CN 101198727 B 20110817; DE 05806144 T1 20080828; JP 2006347855 A 20061228; JP 4806975 B2 20111102; KR 100955887 B1 20100506; KR 20080006013 A 20080115; TW 200700591 A 20070101; TW I266815 B 20061121; WO 2006137178 A1 20061228
DOCDB simple family (application)
EP 05806144 A 20051108; CN 200580050122 A 20051108; DE 05806144 T 20051108; JP 2005020434 W 20051108; JP 2005179997 A 20050620; KR 20077028404 A 20051108; TW 94139645 A 20051111