EP 1895031 A4 20140521 - PROCESS FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL
Title (en)
PROCESS FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL
Title (de)
VERFAHREN ZUR HERSTELLUNG EINES SILICIUMCARBID-EINKRISTALLS
Title (fr)
PROCEDE DESTINE A PRODUIRE UN MONOCRISTAL DE CARBURE DE SILICIUM
Publication
Application
Priority
- JP 2006312553 W 20060616
- JP 2005179412 A 20050620
Abstract (en)
[origin: EP1895031A1] A method for producing a silicon carbide single crystal, which comprises bringing a silicon carbide single crystal substrate into contact with a melt prepared by melting a raw material containing Si and C, and growing a silicon carbide single crystal on the substrate, the method including performing a cycle comprising the following steps (a) and (b): a) a step of bringing the seed crystal substrate into contact with the surface of the melt, growing a single crystal, and separating the seed crystal substrate from the surface of the melt thereby interrupting the growth of the single crystal, and b) a step of bringing the seed crystal substrate into contact with the surface of the melt and growing a single crystal, at least one time, wherein the seed crystal is a 6H-silicon carbide single crystal or a 15R-silicon carbide single crystal and the resulting single crystal is a 4H-silicon carbide single crystal.
IPC 8 full level
C30B 29/36 (2006.01); C30B 17/00 (2006.01); C30B 19/00 (2006.01); C30B 19/04 (2006.01)
CPC (source: EP KR US)
C30B 17/00 (2013.01 - EP KR US); C30B 19/00 (2013.01 - EP US); C30B 19/04 (2013.01 - EP US); C30B 29/36 (2013.01 - EP KR US)
Citation (search report)
- [A] NIKITINA I P ET AL: "Structural analysis of 4H-SiC layers grown on 6H-SiC and 15R-SiC substrates", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 152, no. 4, 1 July 1995 (1995-07-01), pages 292 - 299, XP004004221, ISSN: 0022-0248, DOI: 10.1016/0022-0248(95)00091-7
- [A] CIECHONSKI R R ET AL: "Structural instabilities in growth of SiC crystals", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 275, no. 1-2, 15 February 2005 (2005-02-15), pages e461 - e466, XP027849610, ISSN: 0022-0248, [retrieved on 20050215]
- See also references of WO 2006137500A1
Designated contracting state (EPC)
DE FR
DOCDB simple family (publication)
EP 1895031 A1 20080305; EP 1895031 A4 20140521; EP 1895031 B1 20150603; CN 101203635 A 20080618; CN 101203635 B 20110928; JP 2006347852 A 20061228; JP 4225296 B2 20090218; KR 100897312 B1 20090514; KR 20080009333 A 20080128; US 2009101062 A1 20090423; US 8052793 B2 20111108; WO 2006137500 A1 20061228
DOCDB simple family (application)
EP 06767203 A 20060616; CN 200680022260 A 20060616; JP 2005179412 A 20050620; JP 2006312553 W 20060616; KR 20077029431 A 20071217; US 92146306 A 20060616