EP 1897145 A1 20080312 - NANOSTRUCTURES WITH NEGATIVE DIFFERENTIAL RESISTANCE AND METHOD FOR MAKING SAME
Title (en)
NANOSTRUCTURES WITH NEGATIVE DIFFERENTIAL RESISTANCE AND METHOD FOR MAKING SAME
Title (de)
NANOSTRUKTUREN MIT NEGATIVEM DIFFERENTIELLEM WIDERSTAND UND HERSTELLUNGSVERFAHREN DAFÜR
Title (fr)
NANOSTRUCTURES A RESISTANCE DIFFERENTIELLE NEGATIVE ET LEUR PROCEDE DE FABRICATION
Publication
Application
Priority
- EP 2006063692 W 20060629
- FR 0551848 A 20050630
- FR 0650145 A 20060116
Abstract (en)
[origin: WO2007003576A1] The invention concerns nanostructures of 0, 1, 2 and 3 dimensions, with negative differential resistance and a method for making said nanostructures. The inventive nanostructure is in particular useful in nanoelectronics. It comprises at least one structure (32) or at least a plurality of said at least one structure, on the surface of a silicon carbide substrate (30), the structure being selected among quantum connection pads, atomic segments, atomic lines and aggregates, and at least one metal deposit (34), said metal deposit covering at least the structure or at least the plurality of said at least one structure, or the combination o at least two of said structures with 0, 1, 2 or 3 dimensions.
IPC 8 full level
H01L 29/12 (2006.01); H01L 29/861 (2006.01)
CPC (source: EP US)
B82Y 10/00 (2013.01 - EP US); H01L 29/045 (2013.01 - EP US); H01L 29/125 (2013.01 - EP US); H01L 29/127 (2013.01 - EP US); H01L 29/861 (2013.01 - EP US); H01L 29/1608 (2013.01 - EP US)
Citation (search report)
See references of WO 2007003576A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2007003576 A1 20070111; EP 1897145 A1 20080312; JP 2009500815 A 20090108; US 2010072472 A1 20100325
DOCDB simple family (application)
EP 2006063692 W 20060629; EP 06777518 A 20060629; JP 2008518850 A 20060629; US 92297006 A 20060629