EP 1900020 A1 20080319 - METHOD FOR ASSEMBLING SUBSTRATES BY DEPOSITING AN OXIDE OR NITRIDE THIN BONDING LAYER
Title (en)
METHOD FOR ASSEMBLING SUBSTRATES BY DEPOSITING AN OXIDE OR NITRIDE THIN BONDING LAYER
Title (de)
VERFAHREN ZUM ASSEMBLIEREN VON SUBSTRATEN DURCH ABLAGERN EINER DÜNNEN OXID- ODER NITRID-BONDSHICHT
Title (fr)
PROCEDE D'ASSEMBLAGE DE SUBSTRATS PAR DEPOT D'UNE COUCHE MINCE DE COLLAGE D'OXYDE OU DE NITRURE
Publication
Application
Priority
- FR 2006001596 W 20060705
- FR 0507206 A 20050706
Abstract (en)
[origin: WO2007006914A1] The invention relates to a method for assembling by molecular bonding two substrates, at least one of which is made of a semiconductor material characterised in that one of substrates, called a first substrate, comprises a surface (A), whose at least one part is flat and provided with an initial surface roughness compatible with the molecular bonding. The inventive method consists in depositing a thin oxide or nitride bonding layer (16a, 16b), whose thickness ranges from 10 to 20 nm, on at least one portion (14a, 14b) of the surface flat part (A) of the first substrate for carrying out a molecular bonding without pre-polishing, in saturating the thin bonding layer with hydroxyl groups, in bringing the thin bonding layer (16a, 16b) saturated with hydroxyl groups into contact with the second substrate (10) surface (B) which is at least locally flat with respect to the flat part of the surface (A) and saturated with hydroxyl groups and in carrying out a hydrophilic molecular bonding between said two substrates.
IPC 8 full level
H01L 21/762 (2006.01); H01L 21/58 (2006.01); H01L 21/78 (2006.01); H01L 21/98 (2006.01)
CPC (source: EP US)
H01L 21/78 (2013.01 - EP US); H01L 24/27 (2013.01 - EP US); H01L 24/83 (2013.01 - EP US); H01L 25/50 (2013.01 - EP US); H01L 2224/2919 (2013.01 - EP US); H01L 2224/8385 (2013.01 - EP US); H01L 2224/83894 (2013.01 - EP US); H01L 2924/01005 (2013.01 - EP US); H01L 2924/01006 (2013.01 - EP US); H01L 2924/01013 (2013.01 - EP US); H01L 2924/01015 (2013.01 - EP US); H01L 2924/01019 (2013.01 - EP US); H01L 2924/01021 (2013.01 - EP US); H01L 2924/01023 (2013.01 - EP US); H01L 2924/01032 (2013.01 - EP US); H01L 2924/01033 (2013.01 - EP US); H01L 2924/01049 (2013.01 - EP US); H01L 2924/01055 (2013.01 - EP US); H01L 2924/01057 (2013.01 - EP US); H01L 2924/01061 (2013.01 - EP US); H01L 2924/01079 (2013.01 - EP US); H01L 2924/01082 (2013.01 - EP US); H01L 2924/0132 (2013.01 - EP US); H01L 2924/04953 (2013.01 - EP US); H01L 2924/0665 (2013.01 - EP US); H01L 2924/07802 (2013.01 - EP US); H01L 2924/10329 (2013.01 - EP US); H01L 2924/14 (2013.01 - EP US)
Citation (search report)
See references of WO 2007006914A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
FR 2888402 A1 20070112; FR 2888402 B1 20071221; EP 1900020 A1 20080319; JP 2009500819 A 20090108; US 2008311725 A1 20081218; WO 2007006914 A1 20070118
DOCDB simple family (application)
FR 0507206 A 20050706; EP 06778776 A 20060705; FR 2006001596 W 20060705; JP 2008518928 A 20060705; US 99463606 A 20060705