EP 1900853 A4 20110706 - HIGH-PURITY TIN OR TIN ALLOY AND PROCESS FOR PRODUCING HIGH-PURITY TIN
Title (en)
HIGH-PURITY TIN OR TIN ALLOY AND PROCESS FOR PRODUCING HIGH-PURITY TIN
Title (de)
HOCHREINES ZINN ODER HOCHREINE ZINNLEGIERUNG UND VERFAHREN ZUR HERSTELLUNG VON HOCHREINEM ZINN
Title (fr)
ÉTAIN OU ALLIAGE D ÉTAIN DE GRANDE PURETÉ ET PROCÉDÉ DE PRODUCTION D'ÉTAIN DE GRANDE PURETÉ
Publication
Application
Priority
- JP 2006311912 W 20060614
- JP 2005193323 A 20050701
Abstract (en)
[origin: EP1900853A1] Provided is high purity tin or tin alloy wherein the respective contents of U and Th are 5ppb or less, the respective contents of Pb and Bi are 1 ppm or less, and the purity is 5N or higher (provided that this excludes the gas components of O, C, N, H, S and P). This high purity tin or tin alloy is characterized in that the ± ray count of high purity tin having a cast structure is 0.001 cph/cm 2 or less. Since recent semiconductor devices are densified and are of large capacity, there is considerable risk of a soft error occurring due to the influence of the ± ray from materials in the vicinity of the semiconductor chip. In particular, there are strong demands for purifying the soldering material or tin to be used in the vicinity of semiconductor devices, as well as for materials with fewer ± rays. Thus, the present invention aims to provide high purity tin or tin alloy and the manufacturing method of such high purity tin by reducing the ± dose of tin so as to be adaptable as the foregoing material.
IPC 8 full level
C25C 1/14 (2006.01); C22B 25/08 (2006.01); C22C 13/00 (2006.01)
CPC (source: EP KR US)
C22B 25/04 (2013.01 - US); C22B 25/08 (2013.01 - EP KR US); C22C 13/00 (2013.01 - EP KR US); C22F 1/16 (2013.01 - EP US); C25C 1/14 (2013.01 - EP KR US); C25F 1/04 (2013.01 - EP US); C22B 13/06 (2013.01 - EP US); H01L 23/4827 (2013.01 - EP US); H01L 2224/13111 (2013.01 - EP US); H01L 2924/00011 (2013.01 - EP US); H01L 2924/00014 (2013.01 - EP US); H01L 2924/10253 (2013.01 - EP US)
C-Set (source: EP US)
Citation (search report)
- [XDY] JP H09260427 A 19971003 - FUJITSU LTD
- [Y] US 5217585 A 19930608 - SNYDER THOMAS S [US], et al
- [Y] US 4800024 A 19890124 - ELFLINE GERALDINE S [US]
- [X] A.D. STYRKAS, D.A. STYRKAS: "Two novel methods of the production of high purity tin powders with reduced oxygen content", POWDER TECHNOLOGY, vol. 104, no. 2, 1 September 1999 (1999-09-01), pages 164 - 168, XP002637880
Designated contracting state (EPC)
DE FR
DOCDB simple family (publication)
EP 1900853 A1 20080319; EP 1900853 A4 20110706; EP 1900853 B1 20180509; CN 101213326 A 20080702; CN 101213326 B 20101117; CN 101880893 A 20101110; JP 2010156052 A 20100715; JP 2013189710 A 20130926; JP 4472752 B2 20100602; JP 5295987 B2 20130918; JP 5296269 B1 20130925; JP WO2007004394 A1 20090122; KR 100958652 B1 20100520; KR 20080015942 A 20080220; SG 138124 A1 20080930; TW 200712263 A 20070401; TW I320433 B 20100211; US 2009098012 A1 20090416; US 2014332404 A1 20141113; US 9340850 B2 20160517; WO 2007004394 A1 20070111
DOCDB simple family (application)
EP 06766681 A 20060614; CN 200680023927 A 20060614; CN 201010217741 A 20060614; JP 2006311912 W 20060614; JP 2007523392 A 20060614; JP 2010017939 A 20100129; JP 2013076802 A 20130402; KR 20087001110 A 20060614; SG 2007184468 A 20060614; TW 95122010 A 20060620; US 201414340933 A 20140725; US 91690606 A 20060614