EP 1905734 B1 20090506 - Method of manufacture of an electromechanical component on a planar substrate
Title (en)
Method of manufacture of an electromechanical component on a planar substrate
Title (de)
Herstellungsverfahren für ein elektromechanisches Bauteil auf einem ebenen Substrat
Title (fr)
Procédé de réalisation d'un composant éléctromécanique sur un substrat plan
Publication
Application
Priority
FR 0653975 A 20060927
Abstract (en)
[origin: EP1905734A1] The method involves forming a germanium and silicon alloy based sacrificial layer through a selective epitaxy from uncovered part of an upper surface of a plane substrate (15). A strongly doped silicon layer (20) having a monocrystalline zone on the sacrificial layer and a polycrystalline zone on an insulating zone (18) is formed through epitaxy. An activation electrode (23) and a vibrating structure (22) are formed by engraving, in the monocrystalline zone, and a preset pattern forms a space between the electrode and the structure. The sacrificial layer is eliminated.
IPC 8 full level
B81C 1/00 (2006.01); H03H 3/007 (2006.01); H03H 9/24 (2006.01)
CPC (source: EP US)
B81C 1/0065 (2013.01 - EP US); H03H 3/0073 (2013.01 - EP US); H03H 9/1057 (2013.01 - EP US); H03H 9/2405 (2013.01 - EP US); B81B 2201/0271 (2013.01 - EP US); B81B 2207/015 (2013.01 - EP US); H03H 2009/02496 (2013.01 - EP US)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
EP 1905734 A1 20080402; EP 1905734 B1 20090506; AT E430713 T1 20090515; DE 602007001060 D1 20090618; FR 2906238 A1 20080328; FR 2906238 B1 20081219; JP 2008114363 A 20080522; US 2008076211 A1 20080327; US 7625772 B2 20091201
DOCDB simple family (application)
EP 07117116 A 20070925; AT 07117116 T 20070925; DE 602007001060 T 20070925; FR 0653975 A 20060927; JP 2007249518 A 20070926; US 90485907 A 20070927