EP 1908121 A4 20090930 - DRAIN-EXTENDED MOSFETS WITH DIODE CLAMP
Title (en)
DRAIN-EXTENDED MOSFETS WITH DIODE CLAMP
Title (de)
DRAIN-ERWEITERTE MOSFETS MIT DIODENKLEMMUNG
Title (fr)
TRANSISTORS MOS A DRAIN ETENDU DOTES D'UNE FIXATION DE DIODE
Publication
Application
Priority
US 2005025396 W 20050718
Abstract (en)
[origin: WO2007011354A1] High side extended-drain MOS driver transistors (T2) are presented in which an extended drain (108, 156) is separated from a first buried layer (120) by a second buried layer (130), wherein an internal or external diode (148) is coupled between the first buried layer (120) and the extended drain (108, 156) to increase the breakdown voltage.
IPC 8 full level
H01L 29/94 (2006.01)
CPC (source: EP KR)
H01L 29/1083 (2013.01 - EP); H01L 29/66689 (2013.01 - EP); H01L 29/7818 (2013.01 - EP); H01L 29/94 (2013.01 - KR); H01L 29/42368 (2013.01 - EP)
Citation (search report)
- [X] US 2004159891 A1 20040819 - NAKAMURA KAZUTOSHI [JP], et al
- [A] US 2003173624 A1 20030918 - CHOI YONG-CHEOL [KR], et al
- [A] PARTHASARATHY V ET AL: "Drain profile engineering of resurf LDMOS devices for ESD ruggedness", PROCEEDINGS OF THE 14TH. INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS. ISPSD'02. SANTA FE, NM, JUNE 4 - 7, 2002; [INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S], NEW YORK, NY : IEEE, US, 4 June 2002 (2002-06-04), pages 265 - 268, XP010591617, ISBN: 978-0-7803-7318-1
- See references of WO 2007011354A1
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
WO 2007011354 A1 20070125; EP 1908121 A1 20080409; EP 1908121 A4 20090930; JP 2009502041 A 20090122; KR 100985373 B1 20101004; KR 20080033423 A 20080416
DOCDB simple family (application)
US 2005025396 W 20050718; EP 05772304 A 20050718; JP 2008522752 A 20050718; KR 20087003859 A 20050718