EP 1911036 A1 20080416 - POLYOXOMETALLATES IN MEMORY DEVICES
Title (en)
POLYOXOMETALLATES IN MEMORY DEVICES
Title (de)
POLYOXOMETALLATE IN SPEICHERVORRICHTUNGEN
Title (fr)
POLYOXOMETALLATES DANS DES DISPOSITIFS DE MEMOIRE
Publication
Application
Priority
- FR 2006001882 W 20060802
- FR 0508263 A 20050802
Abstract (en)
[origin: WO2007015010A1] The invention relates to a DRAM memory device with a capacity associated with a field effect transistor, in which all or some of the molecules capable of storing the loads comprising a polyoxometallate are incorporated into the capacity, or a Flash-type memory using at least one field effect transistor, in which the molecules capable of storing the loads comprising a polyoxometallate are incorporated into the floating grid of the transistor. The invention also relates to a method for producing one such device and to an electronic appliance comprising one such memory device.
IPC 8 full level
G11C 13/02 (2006.01); H01L 51/05 (2006.01)
CPC (source: EP US)
B82Y 10/00 (2013.01 - EP US); G11C 11/56 (2013.01 - EP US); G11C 13/0009 (2013.01 - EP US); G11C 13/02 (2013.01 - EP US); H01L 29/40114 (2019.07 - EP US); H01L 29/42332 (2013.01 - EP US); H01L 29/513 (2013.01 - EP US); H01L 29/7881 (2013.01 - EP US); H01L 29/792 (2013.01 - EP US); H10K 10/701 (2023.02 - EP US); G11C 2213/53 (2013.01 - EP US)
Citation (search report)
See references of WO 2007015010A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
FR 2889620 A1 20070209; FR 2889620 B1 20071130; EP 1911036 A1 20080416; US 2008191256 A1 20080814; US 7829927 B2 20101109; WO 2007015010 A1 20070208
DOCDB simple family (application)
FR 0508263 A 20050802; EP 06794273 A 20060802; FR 2006001882 W 20060802; US 99770606 A 20060802